Paper
5 July 2000 High-repetition-rate ArF excimer laser for 193-nm lithography
Kouji Kakizaki, Takashi Saito, Ken-ichi Mitsuhashi, Motohiro Arai, Akifumi Tada, Shinji Kasahara, Tatsushi Igarashi, Kazuaki Hotta
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Abstract
A line-narrowed excimer laser has been developed for use as a light source for DUV microlithography using a refractive lens system. We report on a newly developed 3000 Hz ArF excimer laser with a long duration pulse. The laser has the following specifications: 15W average power, 0.45 pm FWHM bandwidth, 1.5 pm spectral bandwidth at 95 percent integrated energy, and 7 percent energy stability of 3 sigma at 3000 Hz. The integral-square pulse width is longer than 45 ns during a single gas fill more than 50 million pulses. We also report on a 4000 Hz excimer laser, under development.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kouji Kakizaki, Takashi Saito, Ken-ichi Mitsuhashi, Motohiro Arai, Akifumi Tada, Shinji Kasahara, Tatsushi Igarashi, and Kazuaki Hotta "High-repetition-rate ArF excimer laser for 193-nm lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388977
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Excimer lasers

Pulsed laser operation

Laser development

Laser energy

Lithography

Gas lasers

Optical lithography

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