Paper
29 November 2000 Erbium-induced reconstructions on silicon (100) substrate
G. R. Chen, D. W. Gong, Jianhua Liu, Yu Fu, Zhong Huang, Ling Ye
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408438
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Ultra-thin erbium layers are formed on Si(100) substrate by depositing 0.5 approximately 3 ML Er atoms in an ultra-high vacuum system. The films deposited at room temperature are in the amorphous form. After annealing at low temperatures, ordered structures form on the surface. The surface reconstruction is studied by in situ reflection high energy electron diffraction (RHEED). The transition of the RHEED patterns from (2X1) to (4X2) is observed with the increase of Er coverage up to 1 monolayers after low temperature annealing. Several cluster models are adopted for simulating Er adatoms located at different sites on Si(100) substrate to determine the favorable surface geometry. The first principle discrete variational cluster method based on ab initio local density approximation is used to calculate the total energies of different surface configurations.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. R. Chen, D. W. Gong, Jianhua Liu, Yu Fu, Zhong Huang, and Ling Ye "Erbium-induced reconstructions on silicon (100) substrate", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408438
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KEYWORDS
Erbium

Silicon

Chemical species

Bridges

Annealing

Electron beams

Diffraction

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