Dry etching technology of Cr and MoSi layers using high-density plasma source

Hyuk-Joo Kwon; Kwang-Sik Oh; Byung-Soo Chang; Boo-Yeon Choi; Kyung-Ho Park; Soo-Hong Jeong

doi:10.1117/12.410733

22 January 2001 Dry etching technology of Cr and MoSi layers using high-density plasma source

Hyuk-Joo Kwon, Kwang-Sik Oh, Byung-Soo Chang, Boo-Yeon Choi, Kyung-Ho Park, Soo-Hong Jeong

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410733
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

We have manufactured dry etcher system for photomask process utilized the new plasma source and process optimizations have been done for CD (critical dimension) uniformity and loading effects. The 3 ? of CD uniformity(final CD - develop CD, point by point subtraction) of Cr pattern, with 132 x 132 mm2 area and 11 x 11 pattern arrays, was obtained below 10 nm, where the target CD is 0.8 um clear pattern. Cr and MoSi slopes are 88° ~ 90° , which shows highly anisotropic etch. The selectivity of PR to Cr was over 1.6 at the clear area ratios of < 50 % and the selectivity was mainly affected by oxygen partial pressure and clear area ratio. Phase uniformity for PSM was 180 ± 1° and transmittance uniformity is within 6.3 ± 0.02 %. Validity and probability of dry etcher system to produce next generation photomask were discussed.

Citation Download Citation

Hyuk-Joo Kwon, Kwang-Sik Oh, Byung-Soo Chang, Boo-Yeon Choi, Kyung-Ho Park, and Soo-Hong Jeong "Dry etching technology of Cr and MoSi layers using high-density plasma source", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410733

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