Picosecond measurement of trap population dynamics in GaAs:As

Linas Giniunas; R. Danielius; R. Adomavicius; Arunas Krotkus

doi:10.1117/12.417609

8 March 2001 Picosecond measurement of trap population dynamics in GaAs:As

Linas Giniunas, R. Danielius, R. Adomavicius, Arunas Krotkus

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417609
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

The ultrafast dynamics of As-ion implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures the transmitted optical signal is dominated by induced absorption, at higher annealing temperatures this effect is replaced by induced transparency. We explain these features by the saturation of the arsenic antisite related electron traps and by the appearance of the second type of defects, respectively.

Citation Download Citation

Linas Giniunas, R. Danielius, R. Adomavicius, and Arunas Krotkus "Picosecond measurement of trap population dynamics in GaAs:As", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417609

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