193 lithography and RELACS processing for BEOL lithography

Ronald DellaGuardia; Karen E. Petrillo; Jia Chen; Paul Rabidoux; Timothy J. Dalton; Steven J. Holmes; Linda M. Hadel; K. Malone; Arpan P. Mahorowala; S. Greco; Richard A. Ferguson

doi:10.1117/12.435636

14 September 2001 193 lithography and RELACS processing for BEOL lithography

Ronald DellaGuardia, Karen E. Petrillo, Jia Chen, Paul Rabidoux, Timothy J. Dalton, Steven J. Holmes, Linda M. Hadel, K. Malone, Arpan P. Mahorowala, S. Greco, Richard A. Ferguson

Author Affiliations +

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435636
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This paper presents data obtained in developing a process using 193 nm lithography and the RELACS contact hole shrink technique. For the line/space levels, process windows showing resist performance using chrome on glass masks are presented. Data showing feature size linearity and the requirements for optical proximity correction (OPC) are presented. Some of the OPC trends observed are discussed and compared to results obtained using 248 nm lithography. Image shortening data also compares the results obtained in 193 and 248 lithography. Etch results for the new 193 resists are given and show the etch resistance of this relatively new class of photoresist materials. For contact hole and via levels, results using 193 lithography and COG masks show the importance of the mask error enhancement factor (MEEF), print bias and resolution. Due to the relative immaturity and performance of contact hole resists for 193 lithography, Clariant's RELACS process was investigated with 248 nm resists. In this process contact holes are printed larger than required and then reduced to the desired size by a chemical shrink process. Results obtained with 248 lithography using state of the art resists and phase shift masks are discussed. It was found that 140 nm contact holes with at least 0.5 micrometer depth of focus could be obtained. Cross sections and process windows are shown.

Citation Download Citation

Ronald DellaGuardia, Karen E. Petrillo, Jia Chen, Paul Rabidoux, Timothy J. Dalton, Steven J. Holmes, Linda M. Hadel, K. Malone, Arpan P. Mahorowala, S. Greco, and Richard A. Ferguson "193 lithography and RELACS processing for BEOL lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435636

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available