Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe

Aleksander V. Voitsekhovskii; Sergey N. Nesmelov; N. A. Koulchitskii

doi:10.1117/12.417795

22 February 2001 Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe

Aleksander V. Voitsekhovskii, Sergey N. Nesmelov, N. A. Koulchitskii

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417795
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The abnormal photoelectric properties of MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrated and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential (between the subelectrode region and the region away from the electrode (after-electrode region) or between different points in subelectrode region) may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.

Citation Download Citation

Aleksander V. Voitsekhovskii, Sergey N. Nesmelov, and N. A. Koulchitskii "Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417795

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