Dr. Sergey N. Nesmelov Profile

Dr. Sergey N. Nesmelov

at National Research Tomsk State Univ

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 15 December 2015 Paper

Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

Denis Grigoryev, Alexandr Voitsekhovskii, Kirill Lozovoy, Sergey Nesmelov, Stanislav Dzyadukh, Viktor Tarasenko, Michail Shulepov, Sergei Dvoretskii

Proceedings Volume 9810, 98100U (2015) https://doi.org/10.1117/12.2224704

KEYWORDS: Mercury cadmium telluride, Electrons, Dielectrics, Oxides, Plasma, Interfaces, Molecular beam epitaxy, Capacitance, Infrared imaging, Electron beams

Read Abstract +

Proceedings Article | 30 September 2005 Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, T. Zakharyash

Proceedings Volume 5957, 595717 (2005) https://doi.org/10.1117/12.622117

KEYWORDS: Silicon, Mercury cadmium telluride, Resistance, Semiconductors, Capacitance, Electrodes, Mercury, Cadmium, Epitaxy, Dielectrics

Read Abstract +

Proceedings Article | 22 October 2003 Paper

Spectral detectivity and NETD of doping-spike PtSi-p-Si and HIP GeSi-Si detectors

Aleksander Voitsekhovskii, Andrej Kokhanenko, Sergey Nesmelov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519757

KEYWORDS: Sensors, Boron, Ions, Silicon, Chemical species, Semiconductors, Ion beams, Annealing, Infrared sensors, Quantum efficiency

Read Abstract +

Proceedings Article | 14 April 2003 Paper

Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer

Sergey Nesmelov, Aleksander Voitsekhovskii, Andrej Kokhanenko

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502186

KEYWORDS: Quantum efficiency, Silicon, Metals, Semiconductors, Doping, Photodetectors, Scattering, Epitaxy, Ion implantation, Boron

Read Abstract +

Proceedings Article | 27 March 2002 Paper

Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation

Sergey Nesmelov, Aleksander Voitsekhovskii, Aleksander Korotaev, Andrej Kokhanenko

Proceedings Volume 4654, (2002) https://doi.org/10.1117/12.463849

KEYWORDS: Silicon, Ions, Semiconductors, Boron, Metals, Chemical species, Doping, Interfaces, Photodetectors, Ion beams

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer

Aleksander Voitsekhovskii, Andrej Kokhanenko, Aleksander Korotaev, Sergey Nesmelov

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425461

KEYWORDS: Boron, Silicon, Ions, Annealing, Ion beams, Chemical species, Photodetectors, Sputter deposition, Aluminum, Silicon films

Read Abstract +

Proceedings Article | 17 April 2001 Paper

Photoelectric properties of inhomogeneous infrared MIS photodetectors in base of HgCdTe and Si

Aleksander Voitsekhovskii, Sergey Nesmelov

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425462

KEYWORDS: Electrodes, Resistance, Mercury cadmium telluride, Silicon, Semiconductors, Signal generators, Infrared radiation, Photodetectors, Modulation, Infrared photography

Read Abstract +