Dr. Sergey A. Dvoretsky Profile

Dr. Sergey A. Dvoretsky

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Author

Publications (32)

SPIE Journal Paper | 23 November 2020

Mid-infrared stimulated emission in HgCdTe/CdHgTe quantum well heterostructures at room temperature

Mikhail Fadeev, Alexander Troshkin, Alexander Dubinov, Vladimir Utochkin, Anna Razova, Vladimir Rumyantsev, Vladimir Aleshkin, Vladimir Gavrilenko, Nikolay Mikhailov, Sergey Dvoretsky, Sergey Morozov

OE, Vol. 60, Issue 08, 082006, (November 2020) https://doi.org/10.1117/12.10.1117/1.OE.60.8.082006

KEYWORDS: Quantum wells, Heterojunctions, Mid-IR, Mercury cadmium telluride, Photons, Absorption, Cadmium, Optical engineering, Autoregressive models, Semiconductors

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SPIE Journal Paper | 23 November 2020

Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy

Vladimir Rumyantsev, Anna Razova, Mikhail Fadeev, Vladimir Utochkin, Nikolai Mikhailov, Sergey Dvoretsky, Vladimir Gavrilenko, Sergey Morozov

OE, Vol. 60, Issue 08, 082007, (November 2020) https://doi.org/10.1117/12.10.1117/1.OE.60.8.082007

KEYWORDS: Quantum wells, Mercury cadmium telluride, Absorption, Cadmium, Thin films, Heterojunctions, Electrons, Molecular beam epitaxy, Mercury, Liquids

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Proceedings Article | 23 August 2017 Paper

Paper

Temperature-driven massless fermions in HgCdTe heterostructures

F. Teppe, S. Ruffenach, S. Krishtopenko, M. Marcinkiewicz, C. Consejo, J. Torres, M. Orlita, W. Knap, D. Smirnov, S. Morozov, V. Gavrilenko, N. Mikhailov, S. Dvoretskii

Proceedings Volume 10383, 103830C (2017) https://doi.org/10.1117/12.2275037

KEYWORDS: Heterojunctions, Particles, Quantum wells, Cadmium, Magnetism, Quantum electrodynamics, Electrons

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Proceedings Article | 15 December 2015 Paper

Paper

Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

Denis Grigoryev, Alexandr Voitsekhovskii, Kirill Lozovoy, Sergey Nesmelov, Stanislav Dzyadukh, Viktor Tarasenko, Michail Shulepov, Sergei Dvoretskii

Proceedings Volume 9810, 98100U (2015) https://doi.org/10.1117/12.2224704

KEYWORDS: Mercury cadmium telluride, Electrons, Dielectrics, Oxides, Plasma, Interfaces, Molecular beam epitaxy, Capacitance, Infrared imaging, Electron beams

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Proceedings Article | 15 December 2015 Paper

Paper

Influence of complex impact of the picosecond electron beam and volume discharge in atmospheric-pressure air on the electronic properties of MCT epitaxial films surface

Denis Grigoryev, Vadim Novikov, Dmitriy Bezrodnyy, Viktor Tarasenko, Michail Shulepov, Sergei Dvoretskii

Proceedings Volume 9810, 98100S (2015) https://doi.org/10.1117/12.2224696

KEYWORDS: Crystals, Mercury, Solids, Electron beams, Picosecond phenomena, Cadmium, Mercury cadmium telluride, Atomic force microscopy, Microscopy, Semiconductors

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SPIE Journal Paper | 10 December 2015

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors

Fedir Sizov, Zinoviia Tsybrii, Vyacheslav Zabudsky, Oleksandr Golenkov, Volodymyr Petryiakov, Sergey Dvoretsky, Nikolai Michailov, Anna Shevchik-Shekera, Ihor Lysiuk, Ernesto Dieguez

OE, Vol. 54, Issue 12, 127102, (December 2015) https://doi.org/10.1117/12.10.1117/1.OE.54.12.127102

KEYWORDS: Sensors, Terahertz radiation, Infrared sensors, Infrared detectors, Antennas, Mercury cadmium telluride, Infrared imaging, Infrared radiation, Semiconductors, Bolometers

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Proceedings Article | 13 May 2015 Paper

Paper

MCT as sub-terahertz and infrared detector

Fiodor Sizov, Vyacheslav Zabudsky, Sergey Dvoretsky, Vladimir Petryiakov, Aleksandr Golenkov, Katerina Andreyeva, Zinoviia Tsybrii, Anna Shevchik-Shekera, Ernesto Dieguez

Proceedings Volume 9483, 94830V (2015) https://doi.org/10.1117/12.2176854

KEYWORDS: Sensors, Infrared detectors, Infrared sensors, Terahertz radiation, Antennas, Semiconductors, Thermography, Infrared radiation, Bolometers, Photoresistors

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Proceedings Article | 7 October 2014 Paper

Paper

Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors

Alexei Vishnyakov, Victor Stuchinsky, Dmitry Brunev, Alexei Zverev, Sergey Dvoretsky

Proceedings Volume 9220, 92200W (2014) https://doi.org/10.1117/12.2061573

KEYWORDS: Diffusion, Sensors, Staring arrays, Photodiodes, Diodes, Mercury cadmium telluride, Information operations, Photodetectors, Data modeling, Infrared detectors

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Proceedings Article | 26 September 2013 Paper

Paper

Magnetospectroscopy of HgTe based topological insulators

F. Teppe, M. Zholudev, M. Orlita, C. Consejo, N. Diakonova, D. But, D. Coquillat, W. Knap, N. Mikhailov, S. Dvoretskii, V. Aleshkin, V. Gavrilenko

Proceedings Volume 8813, 88130L (2013) https://doi.org/10.1117/12.2022854

KEYWORDS: Quantum wells, Magnetism, Fermions, Terahertz radiation, Dielectrics, Cadmium, Absorption, Systems modeling, Heterojunctions, Oscillators

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Proceedings Article | 18 December 2012 Paper

Paper

Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays

F. Sizov, V. Zabudsky, A. Golenkov, V. Petriakov, S. Dvoretski, Z. Tsybrii

Proceedings Volume 8550, 855027 (2012) https://doi.org/10.1117/12.979768

KEYWORDS: Sensors, Antennas, Terahertz radiation, Field effect transistors, Bolometers, Diodes, Silicon, Resistance, Imaging systems, Semiconductors

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Proceedings Article | 5 November 2010 Paper

Paper

THz/sub-THz narrow-gap semiconductor detector

F. Sizov, V. Dobrovolsky, V. Zabudsky, N. Momot, Z. Tsybrii, N. Michailov, S. Dvoretskii

Proceedings Volume 7854, 785433 (2010) https://doi.org/10.1117/12.869983

KEYWORDS: Bolometers, Electrons, Sensors, Semiconductors, Terahertz radiation, Antennas, Resistance, Electromagnetic radiation, Mercury cadmium telluride, Waveguides

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Proceedings Article | 27 September 2008 Paper

Paper

MCT detectors: from IR to sub-mm and mm wavelength bands

F. Sizov, V. Vasiliev, J. Gumenjuk-Sichevska, Yu. Kamenev, S. Dvoretsky, N. Mikhailov

Proceedings Volume 7100, 71002C (2008) https://doi.org/10.1117/12.797436

KEYWORDS: Sensors, Terahertz radiation, Photodiodes, Bolometers, Semiconductors, Photons, Infrared sensors, Manufacturing, Infrared detectors, Superconductors

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Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and their dependences on thickness and doping both for IR and THz regions are discussed. It is shown by comparison of experimental data and modeling of I-V dark current characteristics that MCT photodiode ultimate electrical characteristics are limited by diffusion current in n⁺-n^--p junctions and by current via the deep traps in the gap with position E_t= 0.7 E_g above the valence band and concentrations N_t = (1.0-5.5)•10¹⁵ cm^-3 which are comparable with donor concentration in n^--region Nd = (1.1-1.8)•1015 cm^-3. Detector array parameters for a wavelength range 8-12 microns are: detectivity D*=1.9•10¹¹ cm•Hz^1/2/W, noise equivalent difference temperature NEDT ≈ 9 mK, dynamical resistance R ≈ 4·10⁹ Ohm for the reverse biases ΔV = 0.1-0.2 V. Also, it is shown that MCT layers can be successfully used as sub-mm or mm wave ambient temperature or moderately cooled hot electron bolometers. Thus, in addition to the wavelength range from SWIR to VLIR, where the MCT detectors are employed mainly as photodiodes or photoresistors, they can be used as sub-mm or mm wave detectors in the range from 190 microns to 8 mm. They can be employed here as semiconductor hot electron bolometers (SHEB). Measurements performed at electromagnetic wave frequencies ν = 37, 55, 77 GHz, and also at 0.89 and 1.58 THz with non-optimized Hg_0.8Cd_0.2Te bolometer prototype, has confirmed the basic concepts of SHEB. At ν = 0.89 THz, 77 GHz and 37 GHz the signal temperature dependencies were measured too. At 77 K the SHEB sensitivity at ν = 37 and 77 GHz is increasing up to two orders compared to room temperature data. The sensitivity S_ν ≈ 2 V/W at 300 K, and calculated both Johnson-Nyquist and generation-recombination noise values give estimations of SHEB NEP ~ 4•10^-10 W at band-width Δf = 1 Hz and ν = 37 GHz.

Proceedings Article | 22 April 2006 Paper

Paper

MCT infrared photodiodes on the basis of graded gap Р-р heterojunction grown by MBE HgCdTe epilayers on GaAs

V. Vasiliev, V. Remesnik, S. Dvoretsky, V. Varavin, N. Mikhailov, Yu. Sidorov, A. Suslyakov, A. Aseev

Proceedings Volume 6189, 61892A (2006) https://doi.org/10.1117/12.663506

KEYWORDS: Staring arrays, Photodiodes, Heterojunctions, Diodes, Gallium arsenide, Signal to noise ratio, Temperature metrology, Mercury cadmium telluride, Sensors, Diffusion

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Proceedings Article | 15 October 2005 Paper

Paper

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Sergey Dvoretsky, Vasiliy Varavin, Nikolay Mikhailov, Yuri Sidorov, Tamara Zakharyash, Vladimir Vasiliev, Victor Ovsyuk, Galina Chekanova, Mikhail Nikitin, Ivan Lartsev, Alexander Aseev

Proceedings Volume 5964, 59640A (2005) https://doi.org/10.1117/12.624912

KEYWORDS: Staring arrays, Long wavelength infrared, Photovoltaics, Sensors, Mid-IR, Heterojunctions, Interfaces, Resistance, Gallium arsenide, Photoresistors

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Proceedings Article | 30 September 2005 Paper

Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, T. Zakharyash

Proceedings Volume 5957, 595717 (2005) https://doi.org/10.1117/12.622117

KEYWORDS: Silicon, Mercury cadmium telluride, Resistance, Semiconductors, Capacitance, Electrodes, Mercury, Cadmium, Epitaxy, Dielectrics

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Proceedings Article | 30 September 2005 Paper

Paper

The boron implantation in the graded-band MBE HgCdTe epilayer

Alexander Voitsekhovskii, Denis Grigor'ev, Andrey Kokhanenko, Alexander Korotaev, Yuriy Sidorov, Vasiliy Varavin, Sergey Dvoretsky, Nicolay Mikhailov, Niyaz Kh. Talipov

Proceedings Volume 5957, 595718 (2005) https://doi.org/10.1117/12.622158

KEYWORDS: Boron, Ions, Mercury, Cadmium, Tellurium, Ion implantation, Statistical analysis, Mercury cadmium telluride, Manufacturing, Diffusion

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Proceedings Article | 6 December 2004 Paper

Paper

Performance of small-pitched Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures

Galina Chekanova, Albina Drugova, Sergey Dvoretski, Viacheslav Kholodnov, Alexey Komov, Alexander Kurbatov, Ivan Lartsev, Mikhail Nikitin, Yuri Sidorov

Proceedings Volume 5612, (2004) https://doi.org/10.1117/12.578065

KEYWORDS: Photoresistors, Cadmium, Tellurium, Mercury, Long wavelength infrared, Staring arrays, Resistance, Lanthanum, Thermography, Manufacturing

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Proceedings Article | 1 September 2004 Paper

Paper

Advanced Hg1-xCdxTe detectors based on MBE-grown multi-layer structures for IR spectroscopy and synergy with IR-fiber optics

Galina Chekanova, Mikhail Nikitin, Viacheslav Artyushenko, Marina Musina, Albina Drugova, Viacheslav Kholodnov, Sergey Dvoretski, Yuri Sidorov

Proceedings Volume 5459, (2004) https://doi.org/10.1117/12.545485

KEYWORDS: Photoresistors, Cadmium, Tellurium, Mercury, Sensors, Infrared sensors, Infrared spectroscopy, Long wavelength infrared, Mid-IR, Absorption

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Proceedings Article | 19 February 2004 Paper

Paper

MCT linear arrays and associated silicon readouts

Fiodor Sizov, Yurii Derkach, S. Dvoretski, Alexandr Golenkov, J. V. Gumenyuk-Sichevska, Vladimir Reva, Victor Ovsyuk, Yuri Sidorov, N. Talipov, V. Vasiliev, Vyacheslav Zabudsky

Proceedings Volume 5251, (2004) https://doi.org/10.1117/12.513747

KEYWORDS: Charge-coupled devices, Silicon, Manufacturing, Photodiodes, CMOS technology, Diodes, Gallium arsenide, Transistors, Mercury cadmium telluride, Staring arrays

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Proceedings Article | 22 October 2003 Paper

Paper

Radiation effects in photoconductive MCT MBE heterostructures

Aleksander Voitsekhovskii, Andrej Kokhanenko, Aleksander Korotaev, D. Grigor'ev, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519767

KEYWORDS: Heterojunctions, Magnetism, Gamma radiation, Radiation effects, Crystals, Mercury cadmium telluride, Semiconductor physics, Molecular beam epitaxy, Electron beams, Statistical analysis

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Proceedings Article | 22 October 2003 Paper

Paper

Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

Aleksander Voitsekhovskii, Andrej Kokhanenko, N. Nesterovich, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519765

KEYWORDS: Anisotropy, Temperature metrology, Annealing, Microscopy, Epitaxy, Gallium arsenide, Crystals, Absorption, Solids, Scattering

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Proceedings Article | 22 October 2003 Paper

Paper

HgCdTe epilayers on GaAs: growth and devices

Vasily Varavin, V. Vasiliev, Sergey Dvoretsky, Nikolay Mikhailov, Victor Ovsyuk, Yuri Sidorov, A. Suslyakov, M. Yakushev, Alexander Aseev

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519761

KEYWORDS: Hassium, Gallium arsenide, Diodes, Tellurium, Crystals, Staring arrays, Mercury, Resistance, Photodiodes, Photoresistors

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Proceedings Article | 30 September 2003 Paper

Paper

The state of the art and prospects of Cd_xHg_1-xTe molecular beam epitaxy

V. Varavin, A. Gutakovsky, S. Dvoretsky, V. Kartashev, A. Latyshev, N. Mikhailov, D. Pridachin, V. Remestnik, S. Rukhlitsky, I. Sabinina, Yu. Sidorov, V. Titov, V. Shvetz, M. Yakushev, A. Aseev

Proceedings Volume 5126, (2003) https://doi.org/10.1117/12.517366

KEYWORDS: Silicon, Gallium arsenide, Tellurium, Molecular beam epitaxy, Mercury, Annealing, Heterojunctions, Photodetectors, Temperature metrology, Photodiodes

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Proceedings Article | 14 April 2003 Paper

Paper

Status of molecular beam epitaxy of CdxHg1-xTe

A. Antsiferov, L. Burdina, Vasily Varavin, A. Gutakovsky, Sergey Dvoretsky, V. Kartashev, Nikolay Mikhailov, D. Pridachin, V. Remesnik, S. Rykhlitskii, I. Sabinina, Yuri Sidorov, E. Spesivtsev, V. Titov, V. Shvets, M. Yakushev, Alexander Aseev

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502290

KEYWORDS: Hassium, Silicon, Gallium arsenide, Control systems, Tellurium, Process control, Photodiodes, Interfaces, Molecular beam epitaxy, Molecular beams

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Proceedings Article | 22 February 2001 Paper

Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417790

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Solids

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Proceedings Article | 22 February 2001 Paper

Paper

2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts

Vladimir Vasilyev, Sergey Dvoretsky, Dmitrii Esaev, T. Zahariash, Anatoly Klimenko, V. Obsyuk, Yuri Sidorov, Fiodor Sizov, Vladimir Reva, Yurii Derkach, Sergey Korinets, Alexandr Golenkov, Sergey Darchuk, Vyacheslav Zabudsky

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417805

KEYWORDS: Silicon, Mercury cadmium telluride, Photodiodes, Charge-coupled devices, Long wavelength infrared, Staring arrays, Manufacturing, Diodes, Infrared radiation, Sensors

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Proceedings Article | 28 November 2000 Paper

Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407736

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Gallium arsenide

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Proceedings Article | 28 November 2000 Paper

Paper

128 X 128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range

Vladimir Vasilyev, Sergey Dvoretsky, Dmitrii Esaev, T. Zakhariash, Anatoly Klimenko, A. Kozlov, I. Marchishin, Victor Ovsyuk, N. Talipov, Yuri Sidorov, A. Suslyakov

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407757

KEYWORDS: Manufacturing, Multiplexers, Staring arrays, Resistance, Indium, Photodetectors, Silicon, Infrared cameras, Infrared imaging, Photodiodes

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Proceedings Article | 22 July 1998 Paper

Paper

128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates

Dmitrii Esaev, Anatoly Klimenko, A. Kozlov, I. Marchishin, Victor Ovsyuk, N. Talipov, T. Zakhariash, Vladimir Vasilyev, Yuri Sidorov, Sergey Dvoretsky

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317628

KEYWORDS: Mercury cadmium telluride, Multiplexers, Gallium arsenide, Photodiodes, Staring arrays, Indium, Manufacturing, Long wavelength infrared, Photodetectors, Thermography

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Proceedings Article | 13 August 1997 Paper

Paper

Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

Vladimir Vasilyev, Dmitrii Esaev, Anatoly Klimenko, A. Kozlov, Alexander Krymsky, I. Marchishin, Victor Ovsyuk, Larisa Romashko, A. Suslyakov, N. Talipov, V. Voinov, T. Zakhariash, Yuri Sidorov, Vasily Varavin, Sergey Dvoretsky, Nikolay Mikhailov

Proceedings Volume 3061, (1997) https://doi.org/10.1117/12.280314

KEYWORDS: Sensors, Photodiodes, Detector arrays, Multiplexers, Staring arrays, Photodetectors, Gallium arsenide, Indium, Mercury cadmium telluride, Long wavelength infrared

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Proceedings Article | 17 June 1996 Paper

Paper

Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy

Victor Ovsyuk, A. Suslyakov, T. Zahariash, S. Studenikin, Vladimir Vasilyev, Yuri Sidorov, Sergey Dvoretsky, Vasily Varavin, Nikolay Mikhailov, V. Liberman

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243050

KEYWORDS: Photoresistors, Molecular beam epitaxy, Infrared radiation, Infrared photography, Heterojunctions, Interfaces, Ellipsometry, Gallium arsenide, Long wavelength infrared, Mid-IR

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Proceedings Article | 17 June 1996 Paper

Paper

Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films

Victor Ovsyuk, S. Studenikin, A. Suslyakov, N. Talipov, Vladimir Vasilyev, T. Zahariash, Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, Vasily Varavin

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243041

KEYWORDS: Photodiodes, Diffusion, Long wavelength infrared, Diodes, Oxides, Molecular beams, Annealing, Resistance, Surface roughness, Epitaxy

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Showing 5 of 32 publications

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