Heterostructures with quantum wells (QWs) based on HgCdTe are promising systems for making compact semiconductor sources of the mid-infrared range. This range has paramount practical importance due to the presence of absorption lines of common pollutant gases. Stimulated emission (SE) from HgCdTe heterostructures has been observed previously at the wavelengths up to 3.7  μm at temperatures above 200 K, but the optimal design of the QW is still debated. We present the spectra of SE from a HgCdTe-based heterostructure obtained at room temperature (RT). We investigate the effect of optical excitation wavelength on the characteristics of SE and discuss possible routes toward improving the design of the active region of the sample. Obtained results demonstrate that HgCdTe heterostructures can be used for the creation of lasers operating at RT at the wavelengths in the vicinity of at least 2.5  μm.