Paper
22 February 2001 Polarization properties of the luminescence from silicon nanocrystals
Joachim Diener, Dmitri I. Kovalev, Gennadi Polisski, Frederick Koch
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417772
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous Silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Diener, Dmitri I. Kovalev, Gennadi Polisski, and Frederick Koch "Polarization properties of the luminescence from silicon nanocrystals", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417772
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Cited by 4 scholarly publications.
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KEYWORDS
Dielectric polarization

Silicon

Nanocrystals

Dielectrics

Polarization

Luminescence

Crystals

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