Dry etching characteristics of attenuated phase-shifting masks using Cl2/CF4/O2/He plasmas

Se-Jong Choi; Han-Sun Cha; Si-Yeul Yoon; Sung-Mo Jung; Sang-Soo Choi; Soo-Hong Jeong

doi:10.1117/12.458335

11 March 2002 Dry etching characteristics of attenuated phase-shifting masks using Cl₂/CF₄/O₂/He plasmas

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458335
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

The attenuated phase-shifting mask (Att. PSM) is one of the most useful technologies for sub-micron lithography.1) However, it is difficult to control the parameters such as phase or transmittance when a phase-shifting mask is applied to practical use. Also, to apply phase shift layer (MoSiON), it remains that affects several critical mask parameters including critical dimension (CD), sidewall slope and surface damage. So, in this paper, the effects of added Cl₂ gas, DC bias voltage on the etch characteristics were studied using an inductively coupled CF₄-based plasma. The plasma characteristics and etch properties of inductively coupled CF₄O₂He and Cl₂CF₄O₂He Plasmas were investigated on the etch properties of MoSiON. Each added gas had a unique property on the etch rate, anisotropy, surface roughness and sidewall morphology. As the results of experiment, the most vertical profile and smooth surface were obtained using the 10 sccm Cl2, -200V dc bias. By increasing the dc bias voltage, the undercut on MoSiON layer is not occurred. When plentiful Cl₂ gas was added to the CF₄O₂He plasma, surface roughness was decreased but the edge of Cr slope was damaged at 15 sccm Cl₂. It is suggested from the results of this experiment that the pattern profile and surface roughness on MoSiON layer can be controlled by both quantity of Cl2 gas and dc self-bias voltage.

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Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, and Soo-Hong Jeong "Dry etching characteristics of attenuated phase-shifting masks using Cl₂/CF₄/O₂/He plasmas", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458335

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