Design on MBE material structure of GaAs-based RTD

Wei-Lian Guo; Hui-Lai Liang; Ping-Juan Niu; Shi-Lin Zhang

doi:10.1117/12.476092

13 November 2002 Design on MBE material structure of GaAs-based RTD

Wei-Lian Guo, Hui-Lai Liang, Ping-Juan Niu, Shi-Lin Zhang

Proceedings Volume 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems; (2002) https://doi.org/10.1117/12.476092
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia

Abstract

The Resonant tunneling diode (RTD) is a high speed nanoelectronic device based on quantum resonant tunneling effect. It has the advantage of high frequency, low operating Voltage, low power dissipation, negative resistance, bistability and self-latching. It can be applied in high speed integrated circuits widely. Based on the analysis of correlation between the device characteristic parameters and the material structure parameters, some design rules have been summarized as following: 1. The barrier width L_B of RTD should be selected as narrow as possible to increase the peak current density J_p. 2. The well width L_W should be selected slightly wider to decrease the peak Voltage V_p. 3. The spacer width L_S should be selected slightly narrower to decrease the peak Voltage V_p. 4. The emitter doping density N_E should be determined to a reasonable value to avoid both R_S and intrinsic capacitance C_d too much. 5. Selecting AlAs as the barrier material to increase the barrier height then to increase peak valley current ratio (PVCR). 6. In emitter region, adding a narrow bandgap material layer to form a subwell. The 3dimension/2dimension resonant tunneling changes to 2dimension/3dimension resonant tunneling, the PVCR will be improved. From above design rules, The GaAs based MBE material structure of RTD has been designed, The RTD devices have been fabricated from this material structure shown very good performance. Main characteristic parameters listed as following: Room temperature PVCR 7.6, f_R=54GHZ, switching time t_r≈171ps.

Citation Download Citation

Wei-Lian Guo, Hui-Lai Liang, Ping-Juan Niu, and Shi-Lin Zhang "Design on MBE material structure of GaAs-based RTD", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); https://doi.org/10.1117/12.476092

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium arsenide

Structural design

Resistance

Doping

Diodes

Cadmium

Bistability

Show All Keywords

Keywords/Phrases

Search In:

Publication Years