Paper
25 March 2004 Limitations of proximity-effect correction for electron-beam patterning of photonic crystals
Robert Wuest, Christoph Hunziker, Franck Robin, Patric Strasser, Daniel Erni, Heinz Jackel
Author Affiliations +
Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.522316
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia
Abstract
We investigate the patterning-accuracy limits of proximity-effect corrected (PEC) electron-beam lithography applied to the fabrication of photonic crystals (PhC's). Energy-intensity distribution simulations reveal that conventional dose-modulation PEC techniques present a lower limit of the best attainable hole-radius variation of approximately 1% for a generic PhC structure, while a PEC method proposed by Watson theoretically should yield perfect correction. Simulation results were verified experimentally and additionally we introduce a new method to determine the beam-broadening parameter α. We analyzed the impact of geometrical key parameters of PhC's on achievable patterning accuracy and showed that proximity effects impose severe limitations on the patterning of structures with large filling factors and/or small lattice constants. Furthermore, we performed a sensitivity analysis on the proximity parameters and showed that overestimation of the backscatter efficiency can actually improve the lithographic accuracy and mimic the Watson-PEC method to a certain degree.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Wuest, Christoph Hunziker, Franck Robin, Patric Strasser, Daniel Erni, and Heinz Jackel "Limitations of proximity-effect correction for electron-beam patterning of photonic crystals", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.522316
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Cited by 5 scholarly publications.
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KEYWORDS
Photonic crystals

Lithography

Optical lithography

Backscatter

Electron beam lithography

Photomicroscopy

Computer simulations

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