Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method

Atsushi Sekiguchi; Yoshihisa Sensu; Youichi Minami

doi:10.1117/12.597003

4 May 2005 Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method

Atsushi Sekiguchi, Yoshihisa Sensu, Youichi Minami

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.597003
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

F₂ lithography and 193nm immersion lithography are considered candidates for 65nm node lithography technology. Of these two, 193nm immersion lithography, the latest incarnation of ArF lithography, has attracted more attention. Immersion lithography is different from conventional dry lithography in that the resist is exposed in liquid. Thus, the resist materials leaching from the resist film during exposure and the dissolution of acids generated by the exposure cause problems. Particularly, the resist materials leaching tends to contaminate the surface of the lens. We have been conducting studies on the leaching during exposure using the QCM method. In the present work, we apply this method to the immersion exposure. We report here the results of an in-situ measurement of the resist mass change during immersion exposure and discuss our analysis regarding the resist materials leaching from the resist film during the exposure.

Citation Download Citation

Atsushi Sekiguchi, Yoshihisa Sensu, and Youichi Minami "Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.597003

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