Paper
12 May 2005 Assessment of 5-pole illumination for 65nm-node contact holes
Author Affiliations +
Abstract
The greatest challenge for 65-nm contact holes and via printing is ensuring an acceptable process window (250-nm DoF @ 8% EL) for a wide range of pitches with a MEEF lower than 3.5. To print dense contact holes / vias with a CD less than 100-nm, very high Numerical Apertures (≥ 0.85) are required. Consequently DoF through pitch is dramatically reduced, such that it becomes absolutely necessary to develop new techniques to enhance process latitude. In this paper, we will study the use of customized illuminations formed by combination of small radius conventional illumination and quasar. Generically, this type of illumination is commonly referred to as 5-pole illumination. Specifically this paper, the “windmill” and “soft quasar” options are investigated. These designs are based upon the assumption, that there is a way to optimize for all pitches, the imaging lens pupil filling with diffracted orders. Using a combination of aerial image simulations and experimental (double) exposures, the optimal 5-pole illumination designs are derived, with their simulated performance being compared to conventional illumination settings. For the optimised designs, experimental data is presented for “real” device structures based on the Crolles2 65-nm technology design rules.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francois Weisbuch, Scott Warrick, Will Conley, and Jerome Depre "Assessment of 5-pole illumination for 65nm-node contact holes", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.599760
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Cited by 1 scholarly publication.
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KEYWORDS
Diffractive optical elements

Fiber optic illuminators

Diffraction

Photomasks

Lithography

Optical proximity correction

Computer simulations

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