Dr. François Weisbuch Profile

Dr. François Weisbuch

at GLOBALFOUNDRIES Dresden Module Two GmbH

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 5 October 2023 Paper

Test pattern generation by optimization of the feature space signature

Francois Weisbuch, Jirka Schatz

Proceedings Volume 12802, 1280207 (2023) https://doi.org/10.1117/12.2675601

KEYWORDS: Matrices, Design and modelling, Lithography, Design rules, Feature extraction, Etching, Optical lithography, Optical proximity correction, Evolutionary optimization, Binary data

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Proceedings Article | 14 June 2022 Poster + Paper

Automated SRAF printing detection and quantification through SEM image analysis

Jirka Schatz, Francois Weisbuch, Nivea Schuch, Frederic Robert, Thiago Figueiro

Proceedings Volume PC12053, PC120530Q (2022) https://doi.org/10.1117/12.2614732

KEYWORDS: SRAF, Printing, Scanning electron microscopy, Calibration, Data modeling, Computer simulations, Artificial intelligence, Optical proximity correction, Image analysis, Stochastic processes

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Proceedings Article | 9 March 2021 Presentation + Paper

Investigating SEM-contour to CD-SEM matching

Francois Weisbuch, Jirka Schatz, Sylvio Mattick, Nivea Schuch, Thiago Figueiro, Patrick Schiavone

Proceedings Volume 11611, 116110Y (2021) https://doi.org/10.1117/12.2583715

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Proceedings Article | 22 February 2021 Presentation + Paper

Contour-based model calibration to a minimum number of patterns

Bernd Küchler, Francois Weisbuch, Wolfgang Hoppe, Jirka Schatz, Martin Bohn, Ulrich Klostermann

Proceedings Volume 11613, 116130G (2021) https://doi.org/10.1117/12.2584714

KEYWORDS: Calibration, Data modeling, Resolution enhancement technologies, Process modeling, Scanning electron microscopy, Data acquisition, Optical lithography, Metrology, Lithography, Computer simulations

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Proceedings Article | 23 March 2020 Presentation + Paper

Improving ORC methods and hotspot detection with the usage of aerial images metrology

Francois Weisbuch, Thomas Thaler, Ute Buttgereit, Christian Stötzel, Thomas Zeuner

Proceedings Volume 11327, 113270D (2020) https://doi.org/10.1117/12.2552048

KEYWORDS: Photomasks, Calibration, Etching, Scanners, Lithography, SRAF, Scanning electron microscopy, Semiconducting wafers, Metrology, Optical lithography

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SPIE Journal Paper | 15 April 2019

Characterizing interlayer edge placement with SEM contours

François Weisbuch, Jirka Schatz, Matthias Ruhm

JM3, Vol. 18, Issue 02, 021203, (April 2019) https://doi.org/10.1117/12.10.1117/1.JMM.18.2.021203

KEYWORDS: Scanning electron microscopy, Overlay metrology, Semiconducting wafers, Error analysis, Etching, Metrology, Distance measurement, Control systems, Lithography, Scanners

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Proceedings Article | 19 September 2018 Paper

Measuring inter-layer edge placement error with SEM contours

François Weisbuch, Jirka Schatz, Matthias Ruhm

Proceedings Volume 10775, 107750O (2018) https://doi.org/10.1117/12.2326529

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Overlay metrology, Etching, Distance measurement, Error analysis, Optical alignment, Metrology, Image processing, Statistical analysis

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SPIE Journal Paper | 6 March 2018

Introducing etch kernels for efficient pattern sampling and etch bias prediction

François Weisbuch, Andrey Lutich, Jirka Schatz

JM3, Vol. 17, Issue 01, 013505, (March 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.1.013505

KEYWORDS: Etching, Scanning electron microscopy, Data modeling, Optical proximity correction, Optical lithography, Performance modeling, Calibration, Anisotropic etching, Artificial neural networks, 3D modeling

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Proceedings Article | 28 September 2017 Paper

Pattern sampling for etch model calibration

François Weisbuch, Andrey Lutich, Jirka Schatz

Proceedings Volume 10446, 1044610 (2017) https://doi.org/10.1117/12.2279700

KEYWORDS: Etching, Calibration, Optical lithography, Distance measurement, Scanning electron microscopy, Optical proximity correction, Physics, Photoresist materials, Anisotropic etching

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Proceedings Article | 28 September 2017 Paper

Contour-based etch modeling enablement: from pattern selection to final verification

Jirka Schatz, François Weisbuch, Andrey Lutich

Proceedings Volume 10446, 104460M (2017) https://doi.org/10.1117/12.2279694

KEYWORDS: Etching, Scanning electron microscopy, Performance modeling, Optical proximity correction, Metrology, Data modeling, Image processing, Resolution enhancement technologies, Buildings, Calibration

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Proceedings Article | 30 March 2017 Paper

Design space analysis of novel interconnect constructs for 22nm FDX technology

Tuhin Guha Neogi, Navneet Jain, Piyush Verma, David Permana, Andrey Lutich, Francois Weishbuch, Deepal Wehella-Gamage, Benoit Francois Claude Ramadout, Gowtham Vangara, Juhan Kim, Thomas Herrmann, Kai Sun, Katherina Babich, David Pritchard, Mahbub Rashed

Proceedings Volume 10148, 101480Z (2017) https://doi.org/10.1117/12.2258668

KEYWORDS: Monte Carlo methods, Diffusion, Statistical analysis, Lithography, Manufacturing, Diffractive optical elements, Optical lithography, Design for manufacturability, Silicon, Shape analysis

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Proceedings Article | 24 March 2017 Paper

Optimal structure sampling for etch model calibration

François Weisbuch, Andrey Lutich, Jirka Schatz

Proceedings Volume 10147, 101470I (2017) https://doi.org/10.1117/12.2257994

KEYWORDS: Etching, Data modeling, Calibration, Optical proximity correction, Lithography, Photoresist materials, Physics, Scanning electron microscopy, Optical lithography, Computational lithography, Performance modeling, Anisotropic etching, Distance measurement

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Proceedings Article | 20 October 2016 Paper

Improving contact layer patterning using SEM contour based etch model

François Weisbuch, Andrey Lutich, Jirka Schatz, Tino Hertzsch, Hans-Peter Moll

Proceedings Volume 10032, 1003202 (2016) https://doi.org/10.1117/12.2248013

KEYWORDS: Scanning electron microscopy, Etching, Optical lithography, Calibration, Optical proximity correction, Data modeling, Lithography, Metrology, Photomasks, Semiconducting wafers

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Proceedings Article | 22 June 2015 Paper

Extending critical dimension measurement for optical microlithography with robust SEM image contours

Francois Weisbuch

Proceedings Volume 9530, 953003 (2015) https://doi.org/10.1117/12.2184473

KEYWORDS: Scanning electron microscopy, Photoresist materials, Optical lithography, Image quality, Edge detection, Optical testing, Digital imaging, Inspection, Electron microscopes, Feature extraction

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SPIE Journal Paper | 28 April 2015

Enabling scanning electron microscope contour-based optical proximity correction models

Francois Weisbuch, Kenneth Jantzen

JM3, Vol. 14, Issue 02, 021105, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021105

KEYWORDS: Scanning electron microscopy, Optical proximity correction, Calibration, Electron microscopes, Critical dimension metrology, Data modeling, Metrology, Performance modeling, Model-based design, Cadmium

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Proceedings Article | 18 March 2015 Paper

Calibrating etch model with SEM contours

François Weisbuch, A. Omran, Kenneth Jantzen

Proceedings Volume 9426, 94261T (2015) https://doi.org/10.1117/12.2180271

KEYWORDS: Etching, Calibration, Scanning electron microscopy, Data modeling, Optical proximity correction, Performance modeling, Statistical modeling, Lithography, Optical lithography, Semiconducting wafers

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Proceedings Article | 31 March 2014 Paper

Bringing SEM-contour based OPC to production

François Weisbuch, Kar Kit Koh, Kenneth Jantzen

Proceedings Volume 9052, 905224 (2014) https://doi.org/10.1117/12.2048288

KEYWORDS: Data modeling, Calibration, Scanning electron microscopy, Optical proximity correction, Performance modeling, Cadmium, Metrology, Critical dimension metrology, Statistical modeling, Semiconducting wafers

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Proceedings Article | 27 March 2014 Paper

Assessing SEM contour based OPC models quality using rigorous simulation

Francois Weisbuch, Aravind Samy Naranaya

Proceedings Volume 9051, 90510A (2014) https://doi.org/10.1117/12.2047826

KEYWORDS: Optical proximity correction, 3D modeling, Calibration, Scanning electron microscopy, Data modeling, Performance modeling, 3D metrology, Cadmium, Lithography, Image quality

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Proceedings Article | 8 November 2012 Paper

Correlation between reticle- and wafer-CD difference of multiple 28nm reticle-sites

Guoxiang Ning, Frank Richter, Thomas Thamm, Paul Ackmann, Marc Staples, Francois Weisbuch, Karin Kurth, Joerg Schenker, Andre Leschok, Fang Hong GN

Proceedings Volume 8522, 85220F (2012) https://doi.org/10.1117/12.964376

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Photomasks, Metals, Materials processing, Metrology, Scanners, Binary data, Roads

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Reticle critical dimension uniformity (CDU) is an important criterion for the qualification of mask layer processes. Normally, the smaller the three sigma value of reticle CDU is, the better is the reticle CDU performance. For qualification of mask processes, the mask layers to be qualified should have a comparable reticle CDU compared to the process of record (POR) mask layers. Because the reticle critical dimension (CD) measurement is based on algorithms like “middle side lobe measurement”, evaluation of the reticle CD-values can not reflect aspects like the sidewall angle of the reticle and variation in corner rounding which may be critical for 45nm technology nodes (and below). All involved tools and processes contribute to the wafer intra-field CDU (scanner, track, reticle, metrology). Normally, the reticle contribution to the wafer CDU should be as small as possible. In order to reduce the process contributions to the wafer intra-field CDU during the mask qualification process, the same toolset (exposure tool, metrology tool) should be applied as for the POR. Out of the results of these investigations the correlation between wafer measurement to target (MTT) and reticle MTT can be obtained in order to accurately qualify the CDU performance of the mask processes. We will demonstrate the correlation between reticle MTT and wafer MTT by use of multiple mask processes and alternative mask blank materials. We will investigate the results of four process-layers looking at advanced binary maskblank material from two different suppliers (moreover the results of a 2X-via layer as an example for a phase-shift maskblank is discussed). Objective of this article is to demonstrate the distribution between reticle MTT and wafer MTT as a qualification criterion for mask processes. The correlation between wafer CD-difference and reticle CD-difference of these mask processes are demonstrated by having performed investigations of dense features of different 28nmtechnology process layers (poly-, active-, contact-, 1X-metal-, 2X-via layers). Referring to the correlation between wafer and reticle MTT, the contribution of the reticle CD-difference to the wafer CD-difference can be used as an evaluation method for the transfer-process of different mask sites.

Proceedings Article | 14 October 2011 Paper

Determination of CD variance factors of 28nm 1x-metal layer hotspots using experimental and simulated CD contours

Francois Weisbuch, Jessy Schramm

Proceedings Volume 8166, 81663G (2011) https://doi.org/10.1117/12.897126

KEYWORDS: Photomasks, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Image processing, Lithography, Image quality, Optical proximity correction, Signal to noise ratio, Computer aided design

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Proceedings Article | 27 May 2009 Paper

Mask parameter variation in the context of the overall variation budget of an advanced logic wafer Fab

Rolf Seltmann, Gert Burbach, Anne Parge, Jens Busch, Tino Hertzsch, Andre Poock, Francois Weisbuch, Andre Holfeld

Proceedings Volume 7470, 747006 (2009) https://doi.org/10.1117/12.835166

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Etching, Transistors, Line width roughness, Logic, Oscillators, Scanners, Metrology

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Proceedings Article | 17 October 2008 Paper

OPC hotspot identification challenges: ORC vs. PWQ on wafer

Andre Poock, Sarah McGowan, Francois Weisbuch, Guido Schnasse, Rajesh Ghaskadvi

Proceedings Volume 7122, 71220Y (2008) https://doi.org/10.1117/12.801574

KEYWORDS: Optical proximity correction, Semiconducting wafers, Inspection, Photomasks, Scanning electron microscopy, Calibration, Lithography, Reticles, Critical dimension metrology, Product engineering

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Proceedings Article | 12 May 2005 Paper

Assessment of 5-pole illumination for 65nm-node contact holes

Francois Weisbuch, Scott Warrick, Will Conley, Jerome Depre

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599760

KEYWORDS: Diffractive optical elements, Fiber optic illuminators, Diffraction, Photomasks, Lithography, Optical proximity correction, Printing, Lithographic illumination, Computer simulations, Semiconducting wafers

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Proceedings Article | 8 October 2004 Paper

Improved resolution of submicron KrF laser ablation of polymers by a new filtered imaging irradiation

Sylvain Lazare, Francois Weisbuch, Vladimir Tokarev, Dominique Debarre

Proceedings Volume 5662, (2004) https://doi.org/10.1117/12.596312

KEYWORDS: Laser ablation, Polymers, Liquids, Image filtering, Optical filters, Positron emission tomography, Spatial frequencies, Atomic force microscopy, Modulation, Image resolution

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Proceedings Article | 12 June 2003 Paper

Monitoring of photo-resist poisoning

Julia Simon, Francois Weisbuch, Yves Quere, Olivier Louveau, Christine Bourlot

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485091

KEYWORDS: Semiconducting wafers, Reflectivity, Photomasks, Dielectrics, Lithography, Plasma, Chemistry, Silicon carbide, 193nm lithography, Silicon

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Proceedings Article | 30 July 2002 Paper

Evaluation of double focal plane exposure technique for 248-nm and 193-nm lithography for semidense trenches and contacts

Francois Weisbuch, Francesco Enrichi, Gianfranco Capetti, Govanni Bianucci, Gina Cotti

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474542

KEYWORDS: Lithography, Image processing, Data modeling, Line edge roughness, Semiconducting wafers, Electroluminescence, Image resolution, 193nm lithography, Photomasks, Optical lithography

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Proceedings Article | 20 September 1999 Paper

High-aspect-ratio microdrilling in polymeric materials with intense KrF laser radiation

John Lopez, Sylvain Lazare, Francois Weisbuch

Proceedings Volume 3822, (1999) https://doi.org/10.1117/12.364214

KEYWORDS: Polymers, Laser ablation, Polymethylmethacrylate, Excimer lasers, Ultraviolet radiation, Positron emission tomography, Laser drilling, Composites, Photomicroscopy, Laser-matter interactions

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Showing 5 of 27 publications

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