Fabrication and Evaluation of InSb MIS Structure Prepared by Photo-Chemical Vapor Deposition

Kai-feng Huang; J. S. Shie; J. J. Luo; J. S. Chen; S. J. Yang; S. L. Tu

doi:10.1117/12.951755

7 July 1986 Fabrication and Evaluation of InSb MIS Structure Prepared by Photo-Chemical Vapor Deposition

Kai-feng Huang, J. S. Shie, J. J. Luo, J. S. Chen, S. J. Yang, S. L. Tu

Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951755
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

Thin silicon dioxide films were prepared by photo chemical vapor deposition. IR absorption and Auger electron spectroscopy have shown that the dominant components of the oxide are silicon and oxygen with little amount of hydrogen. MIS capacitors were constructed on InSb substrates. C-V characteristics of the MIS capacitors were measured, and mid-gap interface state density of low 1012 cm-2eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, mid-gap interface state density was reduced to 5x10-11 cm-2eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

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Kai-feng Huang, J. S. Shie, J. J. Luo, J. S. Chen, S. J. Yang, and S. L. Tu "Fabrication and Evaluation of InSb MIS Structure Prepared by Photo-Chemical Vapor Deposition", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951755

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