Paper
7 February 2006 Experimental and theoretical study of multiple cations intermixing in InP-based quantum dot-in-well structure
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Abstract
We investigated the multiple cations intermixing in InAs/InGaAlAs quantum dot-in-well laser structure grown on InP substrate using impurity-free vacancy disordering (IFVD) technique. Selective control of the bandgap shifts has been achieved using SiO2 and SixNy annealing caps. A differential wavelength shift of 76 nm has been observed after a rapid thermal annealing step at 750 oC for 30 s. In contrast to most IFVD results in other materials, we observed a larger bandgap shift from the SixNy capped samples than from the SiO2 capped samples. Based on theoretical calculations, we attribute this to the different effective interdiffusion rates of group-III cations. The demonstrated intermixing process provides an effective method for fine tuning the bandgap of InAs QDs around 1.55 μm as an alternative to the growth manipulation, as well as for realizing photonics integrated circuits.
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Yang Wang, Hery S. Djie, and Boon S. Ooi "Experimental and theoretical study of multiple cations intermixing in InP-based quantum dot-in-well structure", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612902 (7 February 2006); https://doi.org/10.1117/12.647005
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KEYWORDS
Silicon

Gallium

Annealing

Quantum wells

Diffusion

Chemical species

Aluminum

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