Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition

N. Nuntawong; J. Tatebayashi; P. S. Wong; Y. C. Xin; C. P. Hains; S. Huang; L. F. Lester; D. L. Huffaker

doi:10.1117/12.656492

7 February 2006 Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition

N. Nuntawong, J. Tatebayashi, P. S. Wong, Y. C. Xin, C. P. Hains, S. Huang, L. F. Lester, D. L. Huffaker

Author Affiliations +

Proceedings Volume 6129, Quantum Dots, Particles, and Nanoclusters III; 61290E (2006) https://doi.org/10.1117/12.656492
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

In this paper, we describe the results of using strain-compensation (SC) for closely-stacked InAs/GaAs quantum dot (QD) structures. The effects of the (In)GaP SC layers has been investigated using several methods. High-resolution x-ray diffractometry (XRD) quantifies the values of experimental strain reduction compared to calculations. Atomic force microscopy (AFM) indicates that the SC layer improves both QD uniformity and reduces defect density. Furthermore, increase in photoluminescence (PL) intensity has been observed from compensated structure. The use of Indium-flushing to dissolve large defect islands prevent further defect propagation in stacked QD active region. Room-temperature ground-state lasing at emission wavelengths of 1227-1249 nm have been realized with threshold current densities of 208-550 A/cm² for 15-20 nm spacing structures.

Citation Download Citation

N. Nuntawong, J. Tatebayashi, P. S. Wong, Y. C. Xin, C. P. Hains, S. Huang, L. F. Lester, and D. L. Huffaker "Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 61290E (7 February 2006); https://doi.org/10.1117/12.656492

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