Paper
24 March 2006 New contamination experimental equipment in the NewSUBARU and evaluation of Si-capped multilayer mirrors using it
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Abstract
New experimental equipment was installed in the NewSUBARU synchrotron radiation facility in order to investigate the contamination inhibition mechanism of projection optics for extreme ultraviolet lithography (EUVL). The equipment consisted of two all-metal sealed chambers, and the atmosphere was accurately controlled a over the wider degree of vacuum compared to the previous experimental equipment. The light source was the long undulator (LU) which can irradiate a sample with high EUV flux density of about 200 mW/mm2. Reflectivity and its distribution of an irradiated sample can be measured in situ. NEXAFS spectrum of the sample can be also obtained in situ utilizing the beam-line monochromator, which is a useful method for surface analysis. Using this equipment, EUV irradiation, reflectance measurement, and surface analysis were carried out for Si-capped Mo/Si multilayer (ML) samples. A wavelength dependence of photoemission current was changed at the irradiated area, which suggested that the phase change of standing wave at the ML surface occurred from contamination.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahito Niibe, Yukinobu Kakutani, Shigeru Terashima, Hiromitsu Takase, Yoshio Gomei, Shuichi Matsunari, Takashi Aoki, Katsuhiko Murakami, and Yasuaki Fukuda "New contamination experimental equipment in the NewSUBARU and evaluation of Si-capped multilayer mirrors using it", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615134 (24 March 2006); https://doi.org/10.1117/12.656845
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Cited by 3 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Mirrors

Reflectivity

Contamination

Extreme ultraviolet lithography

Absorption

Carbon

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