Optimization of contact hole lithography for 65-nm node logic LSI

Yuji Setta; Hiroki Futatsuya; Atsushi Sagisaka; Tatsuo Chijimatsu; Takayoshi Minami; Fumitoshi Sugimoto; Seiichi Ishikawa; Satoru Asai

doi:10.1117/12.656224

20 March 2006 Optimization of contact hole lithography for 65-nm node logic LSI

Yuji Setta, Hiroki Futatsuya, Atsushi Sagisaka, Tatsuo Chijimatsu, Takayoshi Minami, Fumitoshi Sugimoto, Seiichi Ishikawa, Satoru Asai

Author Affiliations +

Proceedings Volume 6154, Optical Microlithography XIX; 61543T (2006) https://doi.org/10.1117/12.656224
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Patterning of contact/via is a difficult issue for the optical lithography for each successive generation of LSIs. We examined a number of approaches to obtain a large process window and found that a dry ArF exposure tool with a large depth of focus (DOF) can form 100 nm contact holes. Our experimental results show that enough DOF can be obtained for various layouts by using sub-resolution assist feature (SRAF) technology and a unique illumination technology.

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Yuji Setta, Hiroki Futatsuya, Atsushi Sagisaka, Tatsuo Chijimatsu, Takayoshi Minami, Fumitoshi Sugimoto, Seiichi Ishikawa, and Satoru Asai "Optimization of contact hole lithography for 65-nm node logic LSI", Proc. SPIE 6154, Optical Microlithography XIX, 61543T (20 March 2006); https://doi.org/10.1117/12.656224

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