Paper
11 September 2006 Semiconductor photoanodes in the system Fe2O3-Nb2O5 for photoelectrochemical water splitting
Vladimir M. Aroutiounian, Valery M. Arakelyan, Gohar E. Shahnazaryan, Gnel M. Stepanyan, Heli Wang, John A. Turner
Author Affiliations +
Abstract
Ceramic semiconductor photoelectrodes made of the Fe2O3-Nb2O5 solid solutions were synthesized. The spectral and capacitance-voltage characteristics of the photoelectrodes were determined, and the dynamic polarization with chopped light was investigated. The anodic photocurrent onset potential, the flat band potential and the shallow and deep donor density of these materials were determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode were calculated. Analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell was carried out. On the basis of this analysis, equivalent circuits describing the structure of the double electrical layer of the semiconductor - electrolyte interface were proposed and their parameters were calculated. The main limiting steps of the electrode processes, which determine the electrode polarization and current, are determined.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir M. Aroutiounian, Valery M. Arakelyan, Gohar E. Shahnazaryan, Gnel M. Stepanyan, Heli Wang, and John A. Turner "Semiconductor photoanodes in the system Fe2O3-Nb2O5 for photoelectrochemical water splitting", Proc. SPIE 6340, Solar Hydrogen and Nanotechnology, 63400M (11 September 2006); https://doi.org/10.1117/12.679550
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Iron

Niobium

Semiconductors

Electrodes

Quantum efficiency

Resistance

Doping

RELATED CONTENT

Electrical properties of carbon nanotube FETs
Proceedings of SPIE (September 04 2008)
Application of redox doping in OTFTs
Proceedings of SPIE (August 25 2008)
New surface minority carrier lifetime measurement technique
Proceedings of SPIE (September 14 1994)
Interfacial engineering in blue laser structures
Proceedings of SPIE (December 21 1994)

Back to Top