Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si

B. Kunert; K. Volz; W. Stolz

doi:10.1117/12.714261

8 February 2007 Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si

B. Kunert, K. Volz, W. Stolz

Author Affiliations +

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648513 (2007) https://doi.org/10.1117/12.714261
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature.

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B. Kunert, K. Volz, and W. Stolz "Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648513 (8 February 2007); https://doi.org/10.1117/12.714261

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