Process investigation of a-Si:H thin films prepared by DC magnetron sputtering

Chunling Liu; Chunwu Wang; Yanping Yao; Yuxia Wang; Baoxue Bo

doi:10.1117/12.754917

4 January 2008 Process investigation of a-Si:H thin films prepared by DC magnetron sputtering

Chunling Liu, Chunwu Wang, Yanping Yao, Yuxia Wang, Baoxue Bo

Proceedings Volume 6825, Lasers in Material Processing and Manufacturing III; 682514 (2008) https://doi.org/10.1117/12.754917
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by DC magnetron sputtering, and the effect of sputtering power, the hydrogen flow rate on deposition rate and the optical properties of a-Si:H thin films have been investigated. The hydrogen content (C_H) of the films was calculated by Fourier transform infrared (FTIR) spectroscopy method, the maximum C_H was obtained at 11at. %,and a bandgap of a-Si:H thin films was changed from 1.43 to 2.25 eV with different C_H. It was found that the refractive index (n) and extinction coefficient (k) of the prepared films decreased with the increase of C_H. The results provided experimental basis for preparing a-Si:H thin films with special performance and structure .

Citation Download Citation

Chunling Liu, Chunwu Wang, Yanping Yao, Yuxia Wang, and Baoxue Bo "Process investigation of a-Si:H thin films prepared by DC magnetron sputtering", Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 682514 (4 January 2008); https://doi.org/10.1117/12.754917

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