Paper
15 February 2008 AlGaN/GaN multiple quantum wells grown by atomic-layer deposition
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Abstract
A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, T. C. Lu, H. C. Kuo, and S. C. Wang "AlGaN/GaN multiple quantum wells grown by atomic-layer deposition", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941V (15 February 2008); https://doi.org/10.1117/12.762158
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KEYWORDS
Gallium nitride

Laser sintering

Quantum wells

Atomic layer deposition

Interfaces

Light emitting diodes

Aluminum nitride

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