Prof. Shing-Chung Wang Profile

Prof. Shing-Chung Wang

Professor at National Yang Ming Chiao Tung Univ.

SPIE Involvement:

Track Chair | Author | Instructor

Publications (45)

Proceedings Article | 27 February 2015 Paper

Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities

Tsung Sheng Kao, Tzeng-Tsong Wu, Che-Wei Tsao, Jyun-Hao Lin, Da-wei Lin, Shyh-Jer Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Yan-Kuin Su

Proceedings Volume 9372, 93720C (2015) https://doi.org/10.1117/12.2078577

KEYWORDS: Photonic crystals, Gallium nitride, Polarization, Etching, Photomasks, Scanning electron microscopy, Photonic crystal devices, Electrical engineering, Electron beam lithography, Finite-difference time-domain method

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Proceedings Article | 27 February 2015 Paper

Fabrication of SiC membrane HCG blue reflector using nanoimprint lithography

Ying-Yu Lai, Akihiro Matsutani, Tien-Chang Lu, Shing-Chung Wang, Fumio Koyama

Proceedings Volume 9372, 937207 (2015) https://doi.org/10.1117/12.2077391

KEYWORDS: Silicon carbide, Reflectors, Nanoimprint lithography, Silicon, Reflectivity, Etching, Scanning electron microscopy, Polarization, Vertical cavity surface emitting lasers, Optical design

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Proceedings Article | 27 February 2014 Paper

Numerical analysis on current and optical confinement of III-nitride vertical-cavity surface-emitting lasers

Ying-Yu Lai, Tien-Chang Lu, Tsung-Lin Ho, Shen-Che Huang, Shing-Chung Wang

Proceedings Volume 9001, 90010J (2014) https://doi.org/10.1117/12.2038448

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum nitride, Quantum wells, Numerical analysis, Resistance, Light emitting diodes, Absorption, Gallium nitride, Device simulation, Optical properties

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Proceedings Article | 19 February 2014 Paper

GaN-based surface-emitting lasers using high-contrast grating

Tien-Chang Lu, Shing-Chung Wang, Tzeng-Tsong Wu, Shu-Hsien Wu, Yu-Cheng Syu

Proceedings Volume 8995, 89950E (2014) https://doi.org/10.1117/12.2042064

KEYWORDS: Reflectivity, Polarization, Neodymium, Scattering, Distributed Bragg reflectors, Vertical cavity surface emitting lasers, Resonators, Finite element methods, Gallium nitride, Ions

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Proceedings Article | 15 March 2013 Paper

Fano resonances GaN-based high contrast grating surface-emitting lasers

Tzeng-Tsong Wu, Shu-Hsien Wu, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 8633, 86330B (2013) https://doi.org/10.1117/12.2002911

KEYWORDS: Reflectivity, Polarization, Vertical cavity surface emitting lasers, Gallium nitride, Neodymium, Electrophoretic light scattering, Electroluminescence, Resonators, Scattering, Ions

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Proceedings Article | 29 February 2012 Paper

Exciton-polaritons study in ZnO-based hybrid microcavities

Yu-Pin Lan, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Tien-Chang Lu, Shing-Chung Wang, Wen-Feng Hsieh, Hui Deng

Proceedings Volume 8255, 82551F (2012) https://doi.org/10.1117/12.908529

KEYWORDS: Polaritons, Optical microcavities, Zinc oxide, Excitons, Photons, Reflectivity, Gallium nitride, Dispersion, Oscillators, Polarization

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Proceedings Article | 28 February 2012 Paper

Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

Huei-Min Huang, Tien-Chang Lu, Chiao-Yun Chang, Yu-Pin Lan, Shih-Chun Ling, Wei-Wen Chan, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 8262, 82621Y (2012) https://doi.org/10.1117/12.906635

KEYWORDS: Gallium nitride, Polarization, Indium gallium nitride, Quantum wells, Raman spectroscopy, Phonons, Scanning electron microscopy, Epitaxial lateral overgrowth, Optical testing, Nanorods

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Proceedings Article | 7 February 2012 Paper

Recent advances on CW current injection blue VCSELs

Shing-Chung Wang, Tien-Chang Lu, Hao-Chung Kuo

Proceedings Volume 8276, 827607 (2012) https://doi.org/10.1117/12.907056

KEYWORDS: Vertical cavity surface emitting lasers, Stereolithography, Gallium nitride, Reflectivity, Aluminum nitride, Indium gallium nitride, Dielectrics, Laser damage threshold, Charge-coupled devices

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Proceedings Article | 6 February 2012 Paper

GaN-based microcavity polariton light emitting diodes

Tien-Chang Lu, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Shing-Chung Wang, Yoshihisa Yamamoto

Proceedings Volume 8278, 82780O (2012) https://doi.org/10.1117/12.908343

KEYWORDS: Polaritons, Light emitting diodes, Optical microcavities, Excitons, Electroluminescence, Photons, Gallium nitride, Quantum wells, Dispersion, Image processing

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Proceedings Article | 24 September 2011 Paper

Efficiency droop improvement in GaN-based light emitting diodes by graded-composition electron blocking layer

C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 8123, 81231D (2011) https://doi.org/10.1117/12.892997

KEYWORDS: Light emitting diodes, Electron beam lithography, Aluminum, Gallium nitride, Electron transport, Polarization, Chemical vapor deposition, Solid state lighting, Internal quantum efficiency, Metalorganic chemical vapor deposition

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Proceedings Article | 4 March 2011 Paper

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Proceedings Volume 7939, 79391X (2011) https://doi.org/10.1117/12.876656

KEYWORDS: Light emitting diodes, Gallium nitride, Silicon, Polarization, Electroluminescence, Transmission electron microscopy, External quantum efficiency, Metalorganic chemical vapor deposition, Silicon carbide, Image transmission

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Proceedings Article | 4 March 2011 Paper

Fabrication and lasing characteristics of GaN nanopillars

Ming-Hua Lo, Yuh-Jen Cheng, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 7939, 79391T (2011) https://doi.org/10.1117/12.874151

KEYWORDS: Gallium nitride, Excitons, Nanolithography, Crystals, Nickel, Etching, Thin films, Plasma, Metalorganic chemical vapor deposition, Nanowires

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Proceedings Article | 9 February 2011 Paper

Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions

C. H. Wang, D. W. Lin, C. Chiu, S. P. Chang, Z. Y. Li, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 7954, 795408 (2011) https://doi.org/10.1117/12.874935

KEYWORDS: Light emitting diodes, Quantum wells, Electroluminescence, Gallium nitride, Surface plasmons, Electrons, Polarization, Quantum efficiency, Transmission electron microscopy, Dielectric polarization

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Proceedings Article | 17 March 2010 Paper

Output power enhancement of light-emitting diodes with defect passivation layer

Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu

Proceedings Volume 7602, 76021X (2010) https://doi.org/10.1117/12.841513

KEYWORDS: Etching, Silica, Light emitting diodes, Gallium nitride, Optical lithography, Scanning electron microscopy, Transmission electron microscopy, Chemical mechanical planarization, Crystals, Photomasks

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Proceedings Article | 11 March 2010 Paper

The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers

S. W. Chen, T. T. Kao, T. T. Wu, T. C. Lu, H. C. Kuo, S. C. Wang

Proceedings Volume 7602, 760215 (2010) https://doi.org/10.1117/12.840487

KEYWORDS: Photonic crystals, Polarization, Laser crystals, Gallium nitride, Laser damage threshold, Distributed Bragg reflectors, Optical pumping, Vertical cavity surface emitting lasers, Light wave propagation, Polymethylmethacrylate

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Proceedings Article | 16 February 2009 Paper

Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K

H. C. Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, T. C. Lu, S. C. Wang

Proceedings Volume 7216, 72161A (2009) https://doi.org/10.1117/12.808644

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Optical pumping, Reflectivity, Mirrors, Laser damage threshold, Optical microcavities, Dielectrics, Stereolithography, Continuous wave operation

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Proceedings Article | 18 November 2008 Paper

Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD

C. Chiu, C. Chao, M. Lo, Y. Cheng, H. Kuo, P. Yu, T. Lu, S. Wang, K. Lau

Proceedings Volume 7135, 71351Z (2008) https://doi.org/10.1117/12.804291

KEYWORDS: Light emitting diodes, Silica, Gallium nitride, Sapphire, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Patterned sapphire substrate, External quantum efficiency, Nickel, Nanorods

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Proceedings Article | 15 February 2008 Paper

AlGaN/GaN multiple quantum wells grown by atomic layer deposition

M. Lo, Z. Li, J. Chen, T. Ko, T. Lu, H. Kuo, S. Wang

Proceedings Volume 6894, 68941V (2008) https://doi.org/10.1117/12.762158

KEYWORDS: Gallium nitride, Quantum wells, Laser sintering, Atomic layer deposition, Interfaces, Light emitting diodes, Superlattices, Scanning electron microscopy, Aluminum nitride, Sapphire

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Proceedings Article | 15 February 2008 Paper

Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates

Jun-Rong Chen, Tien-Chang Lu, Gen-Sheng Huang, Tsung-Shine Ko, Hao-Chung Kuo, Shing-Chung Wang

Proceedings Volume 6894, 68941U (2008) https://doi.org/10.1117/12.760296

KEYWORDS: Reflectivity, Infrared radiation, Phonons, Aluminum, Sapphire, Gallium nitride, Dielectrics, Crystals, FT-IR spectroscopy, Infrared spectroscopy

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Proceedings Article | 29 January 2008 Paper

Abnormal PL spectrum in InGaN MQW surface emitting cavity

J. T. Chu, Y.-J. Cheng, H. C. Kuo, T. C. Lu, S. C. Wang

Proceedings Volume 6908, 69080L (2008) https://doi.org/10.1117/12.762869

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Optical microcavities, Helium cadmium lasers, Sapphire, Dielectrics, Metalorganic chemical vapor deposition, Continuous wave operation, Vertical cavity surface emitting lasers

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Proceedings Article | 25 September 2007 Paper

Recent progress on GaN-based vertical cavity surface emitting lasers

T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, S. C. Wang

Proceedings Volume 6766, 67660G (2007) https://doi.org/10.1117/12.729281

KEYWORDS: Vertical cavity surface emitting lasers, Dielectrics, Gallium nitride, Reflectivity, Tantalum, Optical pumping, Optical microcavities, Sapphire, Gallium, Superlattices

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Proceedings Article | 18 October 2006 Paper

Fabrication and characteristics of GaN/AlGaN multilayer structure for terahertz quantum-cascade laser

S. Wang, Richard Soref, Greg Sun

Proceedings Volume 6373, 637309 (2006) https://doi.org/10.1117/12.685678

KEYWORDS: Quantum cascade lasers, Gallium nitride, Aluminum, Gallium, Metalorganic chemical vapor deposition, Phonons, Transmission electron microscopy, X-ray diffraction, Quantum wells, FT-IR spectroscopy

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Proceedings Article | 20 April 2006 Paper

Self-assembled Ni nanodot on SiO₂ film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, Gong-Ru Lin

Proceedings Volume 6195, 61951W (2006) https://doi.org/10.1117/12.663339

KEYWORDS: Silicon, Nickel, Annealing, Etching, Oxygen, Reactive ion etching, Photomasks, Luminescence, Semiconducting wafers, Oxides

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Proceedings Article | 3 March 2006 Paper

Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

H. Yao, G. Huang, T. Lu, C. Chen, W. Liang, H. Kuo, S. Wang

Proceedings Volume 6121, 612102 (2006) https://doi.org/10.1117/12.644706

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum dots, Metalorganic chemical vapor deposition, Atomic force microscopy, Diffusion, Reflectivity, Temperature metrology, Optical properties, Sapphire

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Proceedings Article | 14 March 2005 Paper

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, Shing-Chung Wang

Proceedings Volume 5737, (2005) https://doi.org/10.1117/12.583286

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium, Modulation, Antimony, Metalorganic chemical vapor deposition, Gallium arsenide, Indium gallium arsenide, Temperature metrology, Aluminum

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Proceedings Article | 7 March 2005 Paper

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung-Tang Chu, Wen-Deng Liang, Chih-Chiang Kao, Hung-Wen Huang, Chen-Fu Chu, Hao-Chung Kuo, S. Wang

Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.583288

KEYWORDS: Light emitting diodes, Electrodes, Gallium nitride, Copper, Indium gallium nitride, Laser liftoff, Sapphire, Thermal effects, Fabrication, Semiconductor lasers

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Proceedings Article | 31 January 2005 Paper

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo, Y Chang, Y. Chang, K. Tseng, L. Laih, S. Wang, Hsin-Chieh Yu, Chia-Pin Sung, Hung-Pin Yang

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.577050

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Oxides, Capacitance, Aluminum, Resistance, Picosecond phenomena, Data communications, Reliability

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Proceedings Article | 20 January 2005 Paper

Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, Li-Hong Laih

Proceedings Volume 5628, (2005) https://doi.org/10.1117/12.577321

KEYWORDS: Gallium arsenide, Gallium, Quantum wells, Nitrogen, Optical simulations, Laser applications, Transparency, Temperature metrology, Indium nitride, Indium

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Proceedings Article | 16 June 2004 Paper

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Fang-I Lai, Ya-Hsien Chang, Li-Hong Laih, Hao-chung Kuo, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530023

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Eye, Semiconducting wafers, Reliability, Near field, Gallium arsenide, Gold, Gallium, Picosecond phenomena

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Proceedings Article | 16 June 2004 Paper

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. Chang, Hao-chung Kuo, Fang-I Lai, Li-Hong Laih, S. C. Wang

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.530055

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Gallium arsenide, Metalorganic chemical vapor deposition, Indium, Aluminum, Eye, Capacitance, Resistance

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Proceedings Article | 2 April 2004 Paper

Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process

Shuo-Cheng Wang, Chung-Ti Hsu, Ching-Fa Yeh, Jen-Chung Lou

Proceedings Volume 5276, (2004) https://doi.org/10.1117/12.522034

KEYWORDS: Etching, Silicon, Semiconducting wafers, Thin film devices, Thin films, Transistors, Control systems, Adhesives, Resistors, Wet etching

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Proceedings Article | 17 June 2003 Paper

Temperature-dependent near-field emission profiles of oxide-confined vertical-cavity surface-emitting lasers

Tien-chang Lu, Wen-jun Shieu, Ya-hsien Chang, L. Laih, S. Wang

Proceedings Volume 4994, (2003) https://doi.org/10.1117/12.473600

KEYWORDS: Vertical cavity surface emitting lasers, Near field, Hole burning spectroscopy, Thermal effects, Oxides, Gallium, Aluminum, Temperature metrology, Gallium arsenide, Semiconductor lasers

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SPIE Journal Paper | 1 August 2002

Difference frequency mixing of periodically poled lithium niobate optical parametric oscillator output waves in GaSe crystal

S. Haidar, Y. Hsu, Chen Chang, S. Wang, Hiromasa Ito

OE, Vol. 41, Issue 08, (August 2002) https://doi.org/10.1117/12.10.1117/1.1488606

KEYWORDS: Optical parametric oscillators, Crystals, Gases, Nonlinear crystals, Laser crystals, Lithium niobate, Mid-IR, Mirrors, Polarization, Phase matching

Proceedings Article | 13 March 2002 Paper

Dynamics of Laguerre Gaussian TEM*0,1 mode in a solid state laser

Yu-Pin Lan, S. Wang, Yu-Fen Chen

Proceedings Volume 4630, (2002) https://doi.org/10.1117/12.459011

KEYWORDS: Solid state lasers

Proceedings Article | 13 March 2002 Paper

High-power diode-end-pumped passively mode-locked Nd:YVO4 laser with a relaxed saturable Bragg reflector

Sheng-Wei Tsai, Yu-Pin Lan, S. Wang, Kai-Feng Huang, Yu-Fen Chen

Proceedings Volume 4630, (2002) https://doi.org/10.1117/12.459009

KEYWORDS: Mode locking, Neodymium lasers, Semiconductor lasers, Reflectors, Mirrors, High power lasers, Picosecond phenomena, Absorption, Solid state lasers, Continuous wave operation

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Proceedings Article | 14 April 2000 Paper

Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4 laser

Yu-Fen Chen, C. Liao, Y. Lan, S. Wang

Proceedings Volume 3929, (2000) https://doi.org/10.1117/12.382755

KEYWORDS: Crystals, Neodymium lasers, Laser crystals, Semiconductor lasers, Q switching, Neodymium, Nd:YAG lasers, Pulsed laser operation, High power lasers, Absorption

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Proceedings Article | 9 November 1999 Paper

Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy

Huimei Fang, Y. K. Wang, Ray-yen Tsai, Chen Fu Chu, S. Wang

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369439

KEYWORDS: Gallium nitride, Atomic force microscopy, Crystals, Vapor phase epitaxy, Statistical analysis, Optical properties, X-ray diffraction, Ultraviolet radiation, Atomic force microscope, Luminescence

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Proceedings Article | 2 May 1997 Paper

Analytical model for output optimization of fiber-coupled laser-diode end-pumped lasers

Yung Fu Chen, S. Wang, Ting-Ming Huang, C. Kao, Chi Wang

Proceedings Volume 2989, (1997) https://doi.org/10.1117/12.273679

KEYWORDS: Fiber lasers, Diffraction, Thermal effects, Semiconductor lasers, Diodes, Monochromatic aberrations, Fiber coupled lasers, Absorption, Resonators, Optimization (mathematics)

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Proceedings Article | 30 September 1996 Paper

Output optimization for pumping solid state lasers with fiber-coupled laser diodes

Yung Fu Chen, S. Wang, C. Kao, K. Lin, Ting-Ming Huang, W. Huang

Proceedings Volume 2889, (1996) https://doi.org/10.1117/12.253251

KEYWORDS: Fiber lasers, Modes of laser operation, Nd:YAG lasers, Diodes, Laser resonators, Laser development, Laser damage threshold, Fiber coupled lasers, Optimization (mathematics), Semiconductor lasers

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Proceedings Article | 2 June 1994 Paper

Effect of active-region size on the high-speed modulation of vertical-cavity surface-emitting lasers with lateral injection

Thaddeus Dziura, Y. Yang, Mr. Fernandez, S. Wang

Proceedings Volume 2147, (1994) https://doi.org/10.1117/12.177212

KEYWORDS: Modulation, Diffusion, Data modeling, Vertical cavity surface emitting lasers, Capacitance, Instrument modeling, Resistance, Zinc, Mirrors, Ions

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Proceedings Article | 1 June 1994 Paper

Wafer scale testing of vertical cavity surface-emitting laser arrays

Thaddeus Dziura, S. Wang

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176642

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Modulation, Near field, Wafer testing, Wafer-level optics, Laser development, Photonic integrated circuits, Field effect transistors, Data storage

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Proceedings Article | 2 December 1992 Paper

Modulation characteristics of vertical-cavity surface-emitting lasers

S. Wang, Thaddeus Dziura, Y. Yang

Proceedings Volume 1703, (1992) https://doi.org/10.1117/12.138403

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Resistance, Laser damage threshold, Distortion, Semiconducting wafers, Diffusion, Laser development, Zinc, Gallium arsenide

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Proceedings Article | 1 July 1991 Paper

Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

Y. Yang, Thaddeus Dziura, S. Wang, Mr. Fernandez, G. Du, Shyh Wang

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43836

KEYWORDS: Gallium arsenide, Continuous wave operation, Quantum wells, Semiconductor lasers, Zinc, Mirrors, Resistance, Diffusion, Laser applications, Laser damage threshold

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Proceedings Article | 1 July 1990 Paper

Single-mode high-power diode laser array for optical communication

S. Wang, Richard Stone

Proceedings Volume 1218, (1990) https://doi.org/10.1117/12.18195

KEYWORDS: Semiconductor lasers, Laser applications, Modulation, High power lasers, Beam splitters, Fabry–Perot interferometers, Optical communications, Free space optical communications, Diodes, Laser optics

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Proceedings Article | 1 June 1990 Paper

High-modulation-rate potential for surface emitter laser diode arrays

Thaddeus Dziura, Y. Yang, S. Wang

Proceedings Volume 1217, (1990) https://doi.org/10.1117/12.18151

KEYWORDS: Semiconductor lasers, Modulation, Optoelectronics, Mirrors, Semiconducting wafers, Signal processing, Antennas, Photonic integrated circuits, Liquid phase epitaxy, Vertical cavity surface emitting lasers

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Showing 5 of 45 publications

Proceedings Volume Editor (12)

SPIE Conference Volume | 17 May 2001

Testing, Reliability, and Applications of Optoelectronic Devices

SPIE Conference Volume | 17 May 2001

Testing, Reliability, and Applications of Optoelectronic Devices

SPIE Conference Volume | 29 March 2000

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

SPIE Conference Volume | 29 March 2000

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

SPIE Conference Volume | 14 April 1999

Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV

Showing 5 of 12 publications

Conference Committee Involvement (12)

Testing and Reliability of Optelectronic Devices

26 January 2001 | San Jose, CA, United States

Testing, Reliability, and Applications of Optoelectronic Devices

24 January 2001 | San Jose, CA, United States

Testing, Packaging, and Reliability of Semiconductors Lasers V

26 January 2000 | San Jose, CA, United States

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

25 January 2000 | San Jose, CA, United States

Testing, Packaging, Reliability, and Applications of SemiconductorLasers IV

28 January 1999 | San Jose, CA, United States

Showing 5 of 12 Conference Committees

Course Instructor

SC053: Testing and Reliability of Semiconductor Lasers

This course covers device physics, testing, lifetime and reliability evaluations of semiconductor lasers. The features of semiconductor lasers that are relevant to the device performance and reliability are briefly reviewed. Various laser characterization methods are described. Techniques for evaluation of laser lifetime and factors affecting laser reliability are discussed. Recent developments in semiconductor lasers are presented in the context of their impact on testing and reliability.

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