Weak localization in indium nitride films

X. Z. Yu; Z. Z. Jiang; Y. Yang; W. Pan; W. Z. Shen

doi:10.1117/12.792265

11 March 2008 Weak localization in indium nitride films

X. Z. Yu, Z. Z. Jiang, Y. Yang, W. Pan, W. Z. Shen

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840D (2008) https://doi.org/10.1117/12.792265
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

We have studied the weak localization (WL) effects in the electron accumulation layer on InN surface. Both the spin-orbit relaxation time τ_so and the electron-phonon scattering time τ_e-ph have been extracted from the WL analysis. We have observed that 1/τ_so increase with disorder and τ_e-ph exhibits a tendency to change gradually from the characteristic dependence 1/τ_e-ph ∝ T³ in the pure case to the form of T²l^-1 with increasing disorder.

Citation Download Citation

X. Z. Yu, Z. Z. Jiang, Y. Yang, W. Pan, and W. Z. Shen "Weak localization in indium nitride films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840D (11 March 2008); https://doi.org/10.1117/12.792265

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