Paper
28 February 2009 1220 nm mode-locked GaInNAs disk laser
Mircea Guina, Jussi Rautiainen, Ville-Markus Korpijärvi, Janne Puustinen, Oleg Okhotnikov
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Abstract
We report a passively mode-locked optically pumped semiconductor disk laser with emission at 1220 nm. Both the gain and the semiconductor saturable absorber mirrors used to build the laser are based on InGaAsN/GaAs quantum wells fabricated by molecular beam epitaxy. The growth parameters have been optimized to reduce the detrimental effects of nitrogen on the emission efficiency. Using a gain mirror comprising ten GaInNAs quantum wells with a relatively low nitrogen content and a saturable absorber mirror incorporating two GaInNAs quantum wells, we demonstrate generation of pulses with durations of ~5ps and average powers up to 275mW. We describe the fabrication procedure of the semiconductor structures and the results of laser characterization.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea Guina, Jussi Rautiainen, Ville-Markus Korpijärvi, Janne Puustinen, and Oleg Okhotnikov "1220 nm mode-locked GaInNAs disk laser", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719316 (28 February 2009); https://doi.org/10.1117/12.810555
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KEYWORDS
Mirrors

Quantum wells

Mode locking

Nitrogen

Disk lasers

Semiconductors

Gallium arsenide

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