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Mid-IR silicon photonics DBR laser with hybrid integrated GaSb gain element for sensing applications
The status of the development of the key components of the light source are reported. The Mid-IR PIC is based on the use of thick-SOI technology, SLED is based on AlGaInAsSb materials and the lenses are tailored single crystal, nonoxide glass and heavy metal oxide glasses fabricated by the use of hot-embossing. The packaging concept utilizing automated assembly tools are depicted.
In safety and security applications, the Mid-IR wavelength range covered by the source allows for the detection of several harmful gas components with a single sensor. At the moment, affordable sources are not available. The market impact is expected to be disruptive, since the devices currently in the market are either complicated, expensive and heavy instruments, or the applied measurement principles are inadequate in terms of stability and selectivity.
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