Prof. Saulius Marcinkevicius Profile

Prof. Saulius Marcinkevicius

Professor at KTH Royal Institute of Technology

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Author

Publications (16)

Proceedings Article | 13 November 2024 Presentation + Paper

Carrier injection via V-defects for efficient green and red GaN LEDs

Saulius Marcinkevičius, Rinat Yapparov, Tanay Tak, Jacob Ewing, Feng Wu, Steven DenBaars, Shuji Nakamura, James Speck

Proceedings Volume 13205, 132050G (2024) https://doi.org/10.1117/12.3030973

KEYWORDS: Light emitting diodes, Electroluminescence, Quantum wells, Gallium nitride, Near field scanning optical microscopy, Diffusion, Indium gallium nitride

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Proceedings Article | 5 March 2022 Presentation

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Rinat Yapparov, Yi Chao Chow, Cheyenne Lynsky, Feng Wu, Shuji Nakamura, James Speck, Saulius Marcinkevicius

Proceedings Volume PC12001, PC120010D (2022) https://doi.org/10.1117/12.2608741

KEYWORDS: Quantum wells, Indium gallium nitride, Carrier dynamics, X-rays, X-ray microscopy, Spectroscopy, Near field scanning optical microscopy, Optical microscopy, Microscopy, Luminescence

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Proceedings Article | 5 March 2022 Presentation + Paper

Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination

Rinat Yapparov, Cheyenne Lynsky, Yi-Chao Chow, Shuji Nakamura, James Speck, Saulius Marcinkevičius

Proceedings Volume 12001, 1200104 (2022) https://doi.org/10.1117/12.2608695

KEYWORDS: Quantum wells, Indium gallium nitride, Gallium nitride, Interfaces, Light emitting diodes, Internal quantum efficiency

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Proceedings Article | 5 March 2022 Presentation

Ultrafast carrier dynamics in β-Ga2O3

Saulius Marcinkevicius, James Speck

Proceedings Volume PC12002, PC1200203 (2022) https://doi.org/10.1117/12.2608485

KEYWORDS: Scattering, Ultrafast phenomena, Carrier dynamics, Reflectance spectroscopy, Picosecond phenomena, Phonons, Crystals, Visible radiation, Ultraviolet radiation, Ultrafast laser spectroscopy

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Proceedings Article | 14 March 2018 Presentation

Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)

Tomas Uzdavinys, Daniel Becerra, Mounir Mensi, Ruslan Ivanov, Shuji Nakamura, Steven DenBaars, James Speck, Saulius Marcinkevicius

Proceedings Volume 10532, 105320P (2018) https://doi.org/10.1117/12.2289809

KEYWORDS: Quantum wells, Indium gallium nitride, Near field scanning optical microscopy, Optical microscopy, Near field, Luminescence, Spectroscopy, Interfaces, Electrons, Near field optics

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Proceedings Article | 19 April 2017 Presentation

Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)

Saulius Marcinkevicius, Tomas Uzdavinys, Humberto Foronda, Daniel Cohen, James Speck, Claude Weisbuch

Proceedings Volume 10104, 101040L (2017) https://doi.org/10.1117/12.2250622

KEYWORDS: Spectroscopy, Scattering, Gallium nitride, Ultrafast laser spectroscopy, Ultraviolet radiation, Semiconductors, Electronic components, Time resolved spectroscopy, Luminescence, Crystals

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Proceedings Article | 15 September 2016 Presentation + Paper

Scanning near-field optical microscopy of AlGaN epitaxial layers

S. Marcinkevičius, R. Jain, M. Shatalov, R. Gaska, M. Shur

Proceedings Volume 9926, 992605 (2016) https://doi.org/10.1117/12.2236999

KEYWORDS: Near field scanning optical microscopy, Light emitting diodes, Optical microscopy, Luminescence, Aluminum, Spatial resolution, Near field scanning optical microscopy, Light emitting diodes, Near field, Aluminum nitride, Gallium, Spectroscopy

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Proceedings Article | 13 March 2015 Paper

Spatial variations of optical properties of semipolar InGaN quantum wells

Saulius Marcinkevičius, Kristina Gelžinytė, Ruslan Ivanov, Yuji Zhao, Shuji Nakamura, Steven DenBaars, James Speck

Proceedings Volume 9363, 93631U (2015) https://doi.org/10.1117/12.2076973

KEYWORDS: Quantum wells, Near field, Indium gallium nitride, Near field scanning optical microscopy, Luminescence, Indium nitride, Light emitting diodes, Gallium nitride, Optical properties, Near field optics

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Proceedings Article | 11 March 2010 Paper

Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes

Andrea Pinos, Saulius Marcinkevičius

Proceedings Volume 7602, 76020T (2010) https://doi.org/10.1117/12.840403

KEYWORDS: Light emitting diodes, Electroluminescence, Quantum wells, Aluminum, Diffusion, Chemical species, Near field, Near field scanning optical microscopy, Optical spectroscopy, Aluminum nitride

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Proceedings Article | 16 February 2009 Paper

Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

Qin Wang, Susan Savage, Sirpa Persson, Bertrand Noharet, Stéphane Junique, Jan Andersson, Vytautas Liuolia, Saulius Marcinkevicius

Proceedings Volume 7216, 721627 (2009) https://doi.org/10.1117/12.808469

KEYWORDS: Quantum wells, Ultraviolet radiation, Semiconducting wafers, Sensors, Electroluminescence, Gallium nitride, Biological weapons, Absorption, Biological detection systems, Indium

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Proceedings Article | 6 May 2008 Paper

Impact of dry-etching induced damage in InP-based photonic crystals

Audrey Berrier, Yaocheng Shi, Jörg Siegert, Saulius Marcinkevicius, Sailing He, Srinivasan Anand

Proceedings Volume 6989, 69890U (2008) https://doi.org/10.1117/12.781231

KEYWORDS: Quantum wells, Etching, Ions, Photomasks, Sputter deposition, Annealing, Silica, Plasma enhanced chemical vapor deposition, Interfaces, Photonic crystals

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Proceedings Article | 20 February 2007 Paper

Semiconductor saturable absorbers with recovery time controlled by lattice mismatch

Mircea Guina, Soile Suomalainen, Tommi Hakulinen, Oleg Okhotnikov, Saulius Marcinkevicius

Proceedings Volume 6469, 64690P (2007) https://doi.org/10.1117/12.700273

KEYWORDS: Gallium arsenide, Indium gallium phosphide, Picosecond phenomena, Absorption, Mode locking, Quantum wells, Fiber lasers, Semiconductors, Mirrors, Luminescence

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Proceedings Article | 20 February 2007 Paper

Semiconductor saturable absorbers with recovery time controlled through growth conditions

Mircea Guina, Pietari Tuomisto, Oleg Okhotnikov, Saulius Marcinkevicius, Kenichiro Mizohata, Juhani Keinonen

Proceedings Volume 6451, 645113 (2007) https://doi.org/10.1117/12.725397

KEYWORDS: Semiconductors, Quantum wells, Ions, Picosecond phenomena, Absorption, Gallium arsenide, Mode locking, Plasma, Fiber lasers, Mirrors

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Proceedings Article | 16 June 2004 Paper

Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation

Saulius Marcinkevicius, Christine Carmody, Andreas Gaarder, Hark Tan, Chennupati Jagadish

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.526398

KEYWORDS: Annealing, Indium gallium arsenide, Iron, Picosecond phenomena, Ultrafast phenomena, Ions, Resistance, Ion implantation, Carrier dynamics, Reflectivity

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Proceedings Article | 15 March 1999 Paper

Ultrafast modulation of 1.55-um QW laser structures: optically detected carrier dynamics, limiting mechanisms, and applications

Hartmut Hillmer, Saulius Marcinkevicius

Proceedings Volume 3734, (1999) https://doi.org/10.1117/12.342362

KEYWORDS: Quantum wells, Chlorine, Modulation, Carrier dynamics, Doping, Laser applications, Laser optics, Electron transport, Heterojunctions, Semiconductors

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Proceedings Article | 30 December 1998 Paper

Optically detected carrier transport and capture in III/V semiconductor QW structures: high-resolution experiments, model calculations, and applications in fast 1.55-um lasers

Hartmut Hillmer, Saulius Marcinkevicius

Proceedings Volume 3683, (1998) https://doi.org/10.1117/12.334816

KEYWORDS: Quantum wells, Chlorine, Electrons, Carrier dynamics, Modulation, Heterojunctions, Semiconductors, Doping, Laser applications, Semiconductor lasers

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Showing 5 of 16 publications

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