Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

Qin Wang; Susan Savage; Sirpa Persson; Bertrand Noharet; Stéphane Junique; Jan Y. Andersson; Vytautas Liuolia; Saulius Marcinkevicius

doi:10.1117/12.808469

16 February 2009 Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

Qin Wang, Susan Savage, Sirpa Persson, Bertrand Noharet, Stéphane Junique, Jan Y. Andersson, Vytautas Liuolia, Saulius Marcinkevicius

Author Affiliations +

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721627 (2009) https://doi.org/10.1117/12.808469
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and Al_xGa_1-xN/AlyGa_1-yN multiple quantum well (MQW) structures with operation wavelengths ranging from 270 nm to 450 nm. Utilizing MQW structure as device active layer offers a flexibility to tune its long cut-off wavelength in a wide UV range from solar-blind to visible by adjusting the well width, well composition and barrier height. Similarly, its short cut-off wavelength can be adjusted by using a GaN or AlGaN block layer on a sapphire substrate when the device is illuminated from its backside, which further provides an optical filtering effect. When a current injects into the device under forward bias the device acts as an UV light emitter, whereas the device performs as a typical photodetector under reverse biases. With applying an alternating external bias the device might be used as electroabsorption modulator due to quantum confined Stark effect. In present work fabricated devices have been characterized by transmission/absorption spectra, photoresponsivity, electroluminescence, and photoluminescence measurements under various forward and reverse biases. The piezoelectric effect, alloy broadening and Stokes shift between the emission and absorption spectra in different InGaN- and AlGaN-based QW structures have been investigated and compared. Possibilities of monolithic or hybrid integration using such multiple functional devices for biological warfare agents sensing application have also be discussed.

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Qin Wang, Susan Savage, Sirpa Persson, Bertrand Noharet, Stéphane Junique, Jan Y. Andersson, Vytautas Liuolia, and Saulius Marcinkevicius "Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721627 (16 February 2009); https://doi.org/10.1117/12.808469

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