Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer

Hsueh-Hsing Liu; Guan-Ting Chen; Yung-Ling Lan; Geng-Yen Lee; Jen-Inn Chyi

doi:10.1117/12.809139

16 February 2009 Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer

Hsueh-Hsing Liu, Guan-Ting Chen, Yung-Ling Lan, Geng-Yen Lee, Jen-Inn Chyi

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72160I (2009) https://doi.org/10.1117/12.809139
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Aluminum nitride is a material of great potential for high power electronic devices, UV photonic devices as well as acoustic devices. However, the lack of a good crystal growth technology for bulk material and substrate hinders the development of these AlN-based devices. While AlN has been successfully grown on sapphire substrate for some time, the presence of a large number of dislocations in the material is still a major barrier to overcome [1]. In this work, we demonstrate a low-dislocation-density AlN template on sapphire by inserting an AlN interlayer by metal-organic chemical vapor deposition. The main idea of our approach is to change the growth mode in the course of the epitaxial growth by decreasing growth temperature and changing V/III ratio. As the growth mode changes, dislocations tend to be redirected and/or form dipole half loops via annihilation processes [2]. The etch-pit-density of the AlN templates is reduced from 3.6×10⁹ cm^-2 to 1.7×10⁹ cm^-2. Accordingly, the full width at half maximum of the (0002) x-ray rocking curve is reduced from 37 arcsec to 12 arcsec. The result indicates that the AlN template has low screw and mixed type dislocations. AlGaN/GaN Schottky diodes fabricated on this high quality AlN template exhibit very high breakdown voltage (> 2000 V), which sets a record-high figure of merit of 1.15 GW/cm².

Citation Download Citation

Hsueh-Hsing Liu, Guan-Ting Chen, Yung-Ling Lan, Geng-Yen Lee, and Jen-Inn Chyi "Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160I (16 February 2009); https://doi.org/10.1117/12.809139

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