Electrical defects in AlGaN and InAlN

D. Johnstone; Jacob H. Leach; Vladimir A. Kovalskii; Qian Fan; Jingqiao Xie; Hadis Morkoç

doi:10.1117/12.815020

19 February 2009 Electrical defects in AlGaN and InAlN

D. Johnstone, Jacob H. Leach, Vladimir A. Kovalskii, Qian Fan, Jingqiao Xie, Hadis Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72162R (2009) https://doi.org/10.1117/12.815020
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Compound semiconductors based on GaN have multiple functional applications. Useful compositions include GaN, and ternary and quaternary compositions of (AlGaIn)N. Defects arising from lattice mismatch, point defects, or impurities may act as electrical trapping centers and degrade device efficiency. Current-voltage, capacitance-voltage, thermal admittance spectroscopy (TAS), and deep level transient spectroscopy (DLTS) measurements are applied to characterize the defects in Al_0.40Ga_0.80N and In_0.18Al_0.82N in this report. Broad peaks with a shoulder at high temperature dominate the DLTS spectra in each of the materials. An acceptor trap associated with a dislocation appears at 340 K in AlGaN. The defect has an energy of 0.2 eV and capture cross section of 10^-21 cm². A second trap at 0.35 eV, 10^-14 cm² appears in the TAS measurements in addition to the trap at 0.2 eV. Defects in InAlN are dominated by a peak near 150 K. Two traps appear in the TAS measurements. Both traps in the InAlN are acceptors, based on a lack of field dependent emission rates using double pulse DLTS (DDLTS). The two energy levels in InAlN appear to be coupled, with only one state occupied at a time.

Citation Download Citation

D. Johnstone, Jacob H. Leach, Vladimir A. Kovalskii, Qian Fan, Jingqiao Xie, and Hadis Morkoç "Electrical defects in AlGaN and InAlN", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162R (19 February 2009); https://doi.org/10.1117/12.815020

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