Paper
8 May 2012 Array technology for terahertz imaging
Theodore Reck, Jose Siles, Cecile Jung, John Gill, Choonsup Lee, Goutam Chattopadhyay, Imran Mehdi, Ken Cooper
Author Affiliations +
Abstract
Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theodore Reck, Jose Siles, Cecile Jung, John Gill, Choonsup Lee, Goutam Chattopadhyay, Imran Mehdi, and Ken Cooper "Array technology for terahertz imaging", Proc. SPIE 8362, Passive and Active Millimeter-Wave Imaging XV, 836202 (8 May 2012); https://doi.org/10.1117/12.920497
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Silicon

Transceivers

Imaging systems

Amplifiers

Packaging

Semiconducting wafers

Metals

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