Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node

Sukjong Bae; Jin Choi; Sung Hoon Park; Byung Gook Kim; Chan-Uk Jeon

doi:10.1117/12.981613

29 June 2012 Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node

Sukjong Bae, Jin Choi, Sung Hoon Park, Byung Gook Kim, Chan-Uk Jeon

Author Affiliations +

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410C (2012) https://doi.org/10.1117/12.981613
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

One of the concerned phenomena that influencing to the performance of electron beam mask writer is contamination of deflector. Previous studies show that the relation between the deflector contamination and pattern placement error. In fact, the source of the contamination of deflector was not defined clearly yet. However, the fact that of deflector contamination clearly influences the pattern placement error on mask fabrication. We think that there is no detailed investigation about the effect of deflector contamination on the pattern placement error of production photomask. This paper will describe the effect of e-beam positioning error due to the contamination of deflector in electron optic system. To reduce the placement error by the deflector contamination circumstance the e-beam drift was evaluated in various conditions of deflection based on the theoretical assumption and our own modeling, and optimization of the deflection condition. Furthermore, we will present the requirements on position accuracy of deflector for the photomask of sub 20nm device node.

Citation Download Citation

Sukjong Bae, Jin Choi, Sung Hoon Park, Byung Gook Kim, and Chan-Uk Jeon "Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410C (29 June 2012); https://doi.org/10.1117/12.981613

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available