Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers

Oleksandr V. Bilousov; Joan J. Carvajal; Colm O'Dwyer; Xavier Mateos; Francesc Díaz; Magdalena Aguiló

doi:10.1117/12.2003949

4 March 2013 Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers

Oleksandr V. Bilousov, Joan J. Carvajal, Colm O'Dwyer, Xavier Mateos, Francesc Díaz, Magdalena Aguiló

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 86250T (2013) https://doi.org/10.1117/12.2003949
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Porous GaN crystals have been grown on Pt- and Au- coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas in a CVD system, intermetallic metal-Ga alloys formed at the interface allow the seeding and growth of porous GaN by vapor-solid-solid processes. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers result in near-ohmic contacts to porous n-GaN with low contact resistivities.

Citation Download Citation

Oleksandr V. Bilousov, Joan J. Carvajal, Colm O'Dwyer, Xavier Mateos, Francesc Díaz, and Magdalena Aguiló "Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250T (4 March 2013); https://doi.org/10.1117/12.2003949

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