Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors

S. Keyvaninia; S. Verstuyft; F. Lelarge; G.-H. Duan; S. Messaoudene; J. M. Fédéli; E. J. Geluk; T. De Vries; B. Smalbrugge; J. Bolk; M. Smit; D. Van Thourhout; G. Roelkens

doi:10.1117/12.2017327

29 May 2013 Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors

S. Keyvaninia, S. Verstuyft, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fédéli, E. J. Geluk, T. De Vries, B. Smalbrugge, J. Bolk, M. Smit, D. Van Thourhout, G. Roelkens

Author Affiliations +

Proceedings Volume 8767, Integrated Photonics: Materials, Devices, and Applications II; 87670N (2013) https://doi.org/10.1117/12.2017327
Event: SPIE Microtechnologies, 2013, Grenoble, France

Abstract

In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) – ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3μm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500μm long. mW-level waveguide coupled output power at 20°C and a side mode suppression ratio of more than 40dB is obtained.

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S. Keyvaninia, S. Verstuyft, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fédéli, E. J. Geluk, T. De Vries, B. Smalbrugge, J. Bolk, M. Smit, D. Van Thourhout, and G. Roelkens "Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors", Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670N (29 May 2013); https://doi.org/10.1117/12.2017327

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