Aspects of SiC diode assembly using Ag technology

Marcin Mysliwiec; Marek Guziewicz; Ryszard Kisiel

doi:10.1117/12.2031286

25 July 2013 Aspects of SiC diode assembly using Ag technology

Marcin Mysliwiec, Marek Guziewicz, Ryszard Kisiel

Proceedings Volume 8902, Electron Technology Conference 2013; 89020T (2013) https://doi.org/10.1117/12.2031286
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The aim of our paper is to consider the possibility of applying pure Ag technology for assembly of SiC Schottky diode into a ceramic package able to work at temperatures up to 350°C. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag wire bonds as well as flip-chip technology using Ag balls were used as material for interconnection systems. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package as well as after ageing in air at 350°C in comparison with characteristics of bare SiC diode.

Citation Download Citation

Marcin Mysliwiec, Marek Guziewicz, and Ryszard Kisiel "Aspects of SiC diode assembly using Ag technology", Proc. SPIE 8902, Electron Technology Conference 2013, 89020T (25 July 2013); https://doi.org/10.1117/12.2031286

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available