Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

Yue Pan; Aaron M. Collins; Fahid Algahtani; Patrick W. Leech; Geoffrey K. Reeves; Philip Tanner; Anthony S. Holland

doi:10.1117/12.2033910

7 December 2013 Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

Yue Pan, Aaron M. Collins, Fahid Algahtani, Patrick W. Leech, Geoffrey K. Reeves, Philip Tanner, Anthony S. Holland

Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 892356 (2013) https://doi.org/10.1117/12.2033910
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia

Abstract

Low resistance contracts to highly doped silicon carbide (SiC) are investigated. Using a novel test structure that is easy to fabricate and easy to use, this paper demonstrates how it is used to reliably determine relatively low specific contact resistivities which vary with heat treatment. The test structure requires no error correction and is not affected by parasitic resistances. Using the test structure, small changes in specific contact resistivity are determined for small temperature changes. Results will be presented and discussed on the application of this novel test structure for nickel to highly doped SiC.

Citation Download Citation

Yue Pan, Aaron M. Collins, Fahid Algahtani, Patrick W. Leech, Geoffrey K. Reeves, Philip Tanner, and Anthony S. Holland "Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892356 (7 December 2013); https://doi.org/10.1117/12.2033910

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