Design of sub-wavelength dielectric antireflective grading for multijunction concentrator photovolatics

Wei Wang; Alex Freundlich

doi:10.1117/12.2040431

7 March 2014 Design of sub-wavelength dielectric antireflective grading for multijunction concentrator photovolatics

Wei Wang, Alex Freundlich

Proceedings Volume 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III; 89810Y (2014) https://doi.org/10.1117/12.2040431
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In III-V concentrator applications, sunlight is focused with wide angular distribution that limits the effectiveness of conventional thin-film AR coatings. Furthermore the transmission properties are generally degraded non-uniformly over the electromagnetic spectrum, which in the case of multi-junction solar cells leads to additional sub-cell current matching related losses. Here, and in an attempt to identify a better alternative to the conventional planar layer ARCs for III-V multi-junction concentrator cells in case of with/without protective cover glass in conjunction with wide optical aperture angles, a systematic analysis of design parameters and angular dependent antireflective properties of dielectric gratings has been undertaken, through the implementation of sub-wavelength 2D pyramidal gratings of ZnS and TiO₂. The study indicated limited improvement for devices operated with SiO₂ like cover glass. In the absence of SiO₂ like cover glass, the evaluation indicated that reflection-loss related current losses can be reduced by 2-3 fold compared to their doublelayer ARC counterparts. i.e. for a 3J metamorphic device this lead to a current improvement of 0.7 mA/cm² per concentration for a 60 degree aperture angles

Citation Download Citation

Wei Wang and Alex Freundlich "Design of sub-wavelength dielectric antireflective grading for multijunction concentrator photovolatics", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810Y (7 March 2014); https://doi.org/10.1117/12.2040431

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