Design and characterization of avalanche photodiodes in submicron CMOS technologies

L. Pancheri; T. Bendib; G.-F. Dalla Betta; D. Stoppa

doi:10.1117/12.2037566

7 March 2014 Design and characterization of avalanche photodiodes in submicron CMOS technologies

L. Pancheri, T. Bendib, G.-F. Dalla Betta, D. Stoppa

Proceedings Volume 8982, Optical Components and Materials XI; 898211 (2014) https://doi.org/10.1117/12.2037566
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

Citation Download Citation

L. Pancheri, T. Bendib, G.-F. Dalla Betta, and D. Stoppa "Design and characterization of avalanche photodiodes in submicron CMOS technologies", Proc. SPIE 8982, Optical Components and Materials XI, 898211 (7 March 2014); https://doi.org/10.1117/12.2037566

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