Strong exciton-plasmon coupling in graphene-semiconductor structures

Kirill A. Velizhanin; Tigran V. Shahbazyan

doi:10.1117/12.2061484

17 August 2014 Strong exciton-plasmon coupling in graphene-semiconductor structures

Kirill A. Velizhanin, Tigran V. Shahbazyan

Proceedings Volume 9163, Plasmonics: Metallic Nanostructures and Their Optical Properties XII; 91630F (2014) https://doi.org/10.1117/12.2061484
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton-plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV.

Citation Download Citation

Kirill A. Velizhanin and Tigran V. Shahbazyan "Strong exciton-plasmon coupling in graphene-semiconductor structures", Proc. SPIE 9163, Plasmonics: Metallic Nanostructures and Their Optical Properties XII, 91630F (17 August 2014); https://doi.org/10.1117/12.2061484

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