Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

C. Bayram; J. Kim; C.-W. Cheng; J. Ott; K. B. Reuter; S. W. Bedell; D. K. Sadana; H. Park; C. Dimitrakopoulos

doi:10.1117/12.2082897

13 March 2015 Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

C. Bayram, J. Kim, C.-W. Cheng, J. Ott, K. B. Reuter, S. W. Bedell, D. K. Sadana, H. Park, C. Dimitrakopoulos

Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93641C (2015) https://doi.org/10.1117/12.2082897
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.

Citation Download Citation

C. Bayram, J. Kim, C.-W. Cheng, J. Ott, K. B. Reuter, S. W. Bedell, D. K. Sadana, H. Park, and C. Dimitrakopoulos "Vertical thinking in blue light emitting diodes: GaN-on-graphene technology", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641C (13 March 2015); https://doi.org/10.1117/12.2082897

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