Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

K. Lorenz; A. Redondo-Cubero; M. B. Lourenço; M. C. Sequeira; M. Peres; A. Freitas; L. C. Alves; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; M. R. Correia; T. Monteiro

doi:10.1117/12.2211429

26 February 2016 Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

K. Lorenz, A. Redondo-Cubero, M. B. Lourenço, M. C. Sequeira, M. Peres, A. Freitas, L. C. Alves, E. Alves, M. P. Leitão, J. Rodrigues, N. Ben Sedrine, M. R. Correia, T. Monteiro

Author Affiliations +

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97480L (2016) https://doi.org/10.1117/12.2211429
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 °C resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 °C results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.

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K. Lorenz, A. Redondo-Cubero, M. B. Lourenço, M. C. Sequeira, M. Peres, A. Freitas, L. C. Alves, E. Alves, M. P. Leitão, J. Rodrigues, N. Ben Sedrine, M. R. Correia, and T. Monteiro "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480L (26 February 2016); https://doi.org/10.1117/12.2211429

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