A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

D. Wood; D. Hall; J. P. D. Gow; A. Holland

doi:10.1117/12.2231682

16 August 2016 A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

D. Wood, D. Hall, J. P. D. Gow, A. Holland

Proceedings Volume 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII; 99150J (2016) https://doi.org/10.1117/12.2231682
Event: SPIE Astronomical Telescopes + Instrumentation, 2016, Edinburgh, United Kingdom

Abstract

Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

Citation Download Citation

D. Wood, D. Hall, J. P. D. Gow, and A. Holland "A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150J (16 August 2016); https://doi.org/10.1117/12.2231682

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