Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors

Anna Szerling; Andrzej Taube; Maciej Kaminski; Marek Ekielski; Jarosław Tarenko; Karolina Pągowska; Maciej Kozubal; Kamil Kosiel; Renata Kruszka; Krystyna Golaszewska-Malec; Ernest Brzozowski; Norbert Kwietniewski; Ryszard Kisiel

doi:10.1117/12.2611724

5 March 2022 Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors

Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120011L (2022) https://doi.org/10.1117/12.2611724
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

Normally-off AlGaN/GaN HEMTs with p-GaN-gate, which offer high drain current and low on-state resistance at high threshold voltage and breakdown voltage values above 600V, are particularly attractive for high-power electronics applications. In this work we present the results of development of high power normally-off p-GaN gate AlGaN/GaN high electron mobility transistors carried out at Łukasiewicz Research Network-Institute of Microelectronics and Photonics. We have developed key technological steps i.e. selective etching of p-GaN layers over AlGaN, deposition of proper passivation layer as well as thermally stable isolation of adjacent devices using selective Fe+ ion implantation, which were integrated in the process flow of manufacturing of high power transistors. Finally we have shown measurements of developed normally-off p-GaN gate AlGaN/GaN HEMT power transistors assembled using in-house developed process in TO-220 package.

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Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, and Ryszard Kisiel "Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120011L (5 March 2022); https://doi.org/10.1117/12.2611724

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