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9 March 2024 Monolithic integration of GaAs based compounds on silicon platform for photonic and optoelectronic devices
Thierry Baron, Veronica Letka, Hadi Hijazi, Mattéo Chobé, Leo Mallet-Dida, Mickael Martin, Jérémy Moeyaert, Natalia Massara, Juliette Mignot, Jerome Richy, Christophe Licitra, Romain Thibon, Sophie Barbet, Driss Mouloua, Frédéric Boeuf, Christophe Jany, Karim Hassan
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Proceedings Volume PC12890, Smart Photonic and Optoelectronic Integrated Circuits 2024; PC128900H (2024) https://doi.org/10.1117/12.3000351
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The integration of III-V compound semiconductors on a silicon platform has emerged as a transformative approach to enhance the performance and functionality of photonic and optoelectronic devices. This paper presents recent achievements, challenges, and future prospects of GaAs monolithic integration on silicon with a specific focus in the development of near-infrared (NIR) emitters and photodetectors. We address the challenges associated with III-V monolithic integration on silicon and its compatibility with CMOS processes. These challenges include lattice mismatches, thermal management, and process scalability. We present our latest results obtained on near infrared resonant cavity enhanced photodetector and light emitting devices integrated onto a nominal Si(001) substrate. The devices structures have been optimized by incorporating active regions based on InGaAs/GaAsP strained-layer superlattices and GaAs/AlGaAs distributed Bragg Reflectors. We also show an alternative solution to fabricate low-threshold emitters based on III-As membranes and lateral injection devices.
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Thierry Baron, Veronica Letka, Hadi Hijazi, Mattéo Chobé, Leo Mallet-Dida, Mickael Martin, Jérémy Moeyaert, Natalia Massara, Juliette Mignot, Jerome Richy, Christophe Licitra, Romain Thibon, Sophie Barbet, Driss Mouloua, Frédéric Boeuf, Christophe Jany, and Karim Hassan "Monolithic integration of GaAs based compounds on silicon platform for photonic and optoelectronic devices", Proc. SPIE PC12890, Smart Photonic and Optoelectronic Integrated Circuits 2024, PC128900H (9 March 2024); https://doi.org/10.1117/12.3000351
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KEYWORDS
Silicon
Gallium arsenide
Optoelectronic devices
Photonic devices
Silicon photonics
Near infrared
Photodetectors
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