Mr. Ahmad N. Abbas Profile

Ahmad N. Abbas

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Proceedings Article | 9 May 2012 Paper

Graphene-based field-effect transistor structures for terahertz applications

Ahmad Abbas, Mustafa Karabiyik, Nezih Pala

Proceedings Volume 8363, 83630S (2012) https://doi.org/10.1117/12.919460

KEYWORDS: Graphene, Terahertz radiation, Plasma, Absorption, Field effect transistors, Plasmonics, Modulation, Sensors, Wave propagation, Silica

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We propose Terahertz (THz) plasmonic devices based on linearly integrated FETs (LFETs) on Graphene. LFET structures are advantageous for (THz) detection since the coupling between the THz radiation and the plasma wave is strongly enhanced over the single gate devices and accordingly higher-order plasma resonances become possible. AlGaN/GaN heterostructure LFETs with their high sheet carrier concentration and high electron mobility are promising for plasmonic THz detection. Nevertheless, our numerical studies show that room temperature resonant absorption of THz radiation by the plasmons in AlGaN/GaN LFETs is very weak even if the integration density is sufficiently large. Our simulations also demonstrate that similar LFETs on Graphene, which has very large electron mobility, can resonantly absorb THz radiation up to 5th harmonic at room temperature. Additionally, we investigated LFETs with integrated cavities on Graphene. Such Periodic Cavity LFETs substantially enhance the quality factor of the resonant modes.

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