Mr. Alexander D. Gilblom Profile

Alexander D. Gilblom

at Maxwell-Hiqe Corp

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Proceedings Article | 17 February 2011 Paper

Optimizing quantum efficiency in a stacked CMOS sensor

Rob Hannebauer, Sang Keun Yoo, David Gilblom, Alexander Gilblom

Proceedings Volume 7875, 787505 (2011) https://doi.org/10.1117/12.873610

KEYWORDS: Photodiodes, Silicon, Semiconducting wafers, Quantum efficiency, Mirrors, Antireflective coatings, CMOS sensors, Sensors, Imaging systems, Coating

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Optimizing quantum efficiency of image sensors, whether CCD or CMOS, has usually required backside thinning to bring the photon receiving surface close to the charge generation elements. A new CMOS sensor architecture has been developed that permits high-fill-factor photodiodes to be placed at the silicon surface without the need for backside thinning. The photodiode access provided by this architecture permits application of highly-effective anti-reflection coatings on the input surface and construction of a mirror inside the silicon below the photodiodes to effectively double the optical thickness of the silicon charge generation volume. Secondary benefits of this architecture include prevention of light from reaching the CMOS circuitry under the photodiodes, improvement of near-infrared quantum efficiency, and reduction in optical artifacts caused by reflections from the sensor surface. Utilizing these techniques, a sensor is being constructed with 4096 x 4096 pixels 4.8 μm square with 95% fill factor backed by a mirror tuned to the 400-700 nm visible band and a front-surface anti-reflectance coating. The quantum efficiency is expected to exceed 80% through the visible and the global shutter extinction ratio should exceed 10⁶:1. The sensors have been fabricated and first test data is due in February 2011.

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