A topologically optimized photonic cavity with an integrated lateral p-i-n structure-based silicon (Si) photodetector has been fabricated. The silicon-based cavity allows for the integration of Photodetectors (PDs) in CMOS technology, bypassing challenges associated with adding other materials. The goal of the topological optimization is to maximize the rate of two-photon absorption in silicon, while maintaining small dimensions. The fabricated device was characterized, obtaining a resonant wavelength at 1543 nm with a Q-factor of 6315 and a responsivity of 0.21 mA/W while maintaining a low dark current.
We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2” InP to 4” SiO2/Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 1018 cm-3 for both Zndiffused p-InP and Si-implanted n-InP.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.